Brown-Out Detection Circuit Matched to SRAM Failure Thresholds

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Solution Overview

Problem

Current brown-out detectors in data processing systems are relatively inaccurate, requiring a high voltage margin for correct operation, which is a concern as power supply voltages decrease, and they fail to reliably detect voltage drops that could lead to data corruption in SRAM during low power modes.

Innovation Solution

A brown-out detection circuit that includes a reference circuit with P-channel and N-channel transistors similar to those in SRAM cells, connected in series with a resistive element, and a comparator with built-in offset, allowing for accurate detection of power supply voltage drops by modeling the characteristics of SRAM transistors, thus reducing the required voltage margin for correct operation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If current brown-out detectors are used to monitor power supply voltage, then voltage monitoring is provided, but the detection accuracy is relatively low requiring a high voltage margin

Engineering Contradiction:
Improvevoltage detection accuracyVSAvoidvoltage margin requirement
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent creates a simplified copy of the SRAM cell structure with transistors having matched characteristics (threshold voltage, width-to-length ratio) to the actual SRAM transistors. This copy model allows the brown-out detector to accurately predict when the real SRAM cell will fail, improving detection accuracy without requiring excessive voltage margin.

Inventive Principle:
Principle #26Copying

Solution Approach 2:

The patent modifies the detection approach by changing from direct voltage threshold comparison to monitoring the conduction state of model transistors whose parameters (threshold voltage, dimensions) are specifically adjusted to match the SRAM cell transistors. This parameter matching enables accurate detection at lower voltage margins.

Inventive Principle:
Principle #35Parameter changes

2Use of energy by moving object

If power supply voltage is reduced to lower power consumption, then energy efficiency is improved, but the ability to reliably detect voltage drops that could cause data corruption is compromised

Engineering Contradiction:
Improvepower consumptionVSAvoiddata retention reliability
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The patent implements preliminary detection by monitoring the model transistors before the actual SRAM cell fails. The brown-out detector continuously checks the conduction state of the model transistors, providing advance warning when voltage approaches the critical threshold, allowing the system to take protective action before data corruption occurs.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

By using a copied model of the SRAM transistors with matched characteristics, the detector can predict failure conditions at the same voltage levels where actual SRAM cells would fail, enabling reliable detection even when operating at reduced power supply voltages for lower power consumption.

Inventive Principle:
Principle #26Copying

3Reliability

If a high voltage margin is used to guarantee correct system operation with inaccurate detectors, then system reliability is maintained, but the flexibility to operate at lower power supply voltages is reduced

Engineering Contradiction:
Improvesystem operation reliabilityVSAvoidvoltage operation flexibility
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent replaces the mechanical/voltage-margin-based reliability approach with an electronic sensing approach using matched model transistors. Instead of relying on excessive voltage margin as a safety buffer, the system uses the electrical characteristics of the model transistors to provide precise detection, enabling operation at lower voltages while maintaining reliability.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Data Source

PatentUS8362814B2Data processing system having brown-out detection circuit
Publication Date: 2013.01.29 NXP USA INC
  • US8362814B2 patent drawing
  • US8362814B2 patent drawing
  • US8362814B2 patent drawing

AI summary

A data processing system includes a brown-out detection circuit with a first resistive element, a first transistor, a second transistor, and a comparator. The first resistive element has a first terminal coupled to a first power supply voltage terminal, and a second terminal. The first transistor has a first current electrode coupled to the second terminal of the first resistive element, a control electrode, and a second current electrode. The second transistor has a first current electrode coupled to the second current electrode of the first transistor, a control electrode, and a second current electrode coupled to a second power supply voltage terminal. The comparator has a first input terminal coupled to the first terminal of the first resistive element, a second input terminal coupled to the second terminal of the first resistive element, and an output terminal for providing a brown-out detection signal.