Backside Illumination Metal Shield with Concave Arc Shape
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Backside Illumination (BSI) image sensor chips face challenges in maximizing light reception by image sensors, which affects their quantum efficiency, as existing structures do not effectively optimize light collection from the backside illumination.
Innovation Solution
A metal shield structure is formed on the backside of the BSI image sensor chip with a reversed trapezoid or concave arc shape, allowing more light to be directed towards active image sensors by preventing light from reaching black reference sensors and logic devices, thereby increasing the intensity of light received by the active image sensors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a conventional flat metal shield structure is used on the backside of the BSI image sensor chip, then the structure is simple to manufacture, but the light collection efficiency is insufficient and quantum efficiency is reduced
Solution Approach 1:
The metal shield structure employs a concave arc shape instead of a flat configuration. This curvature allows the shield to reflect and redirect incident light toward the active image sensors while maintaining a compact form factor. The concave geometry optimizes light collection by directing stray light that would otherwise be lost toward the photosensitive elements, thereby improving quantum efficiency without significantly complicating the manufacturing process.
2Reliability
If the metal shield structure is designed to block light from black reference sensors and logic devices, then light collection for active image sensors is improved, but the structural design becomes more complex
Solution Approach 1:
The metal shield structure is designed with spatially varying properties: the concave arc shape is specifically positioned and dimensioned to provide optimal light shielding and redirection for different regions of the chip. The shield's geometry is tailored to block light from reaching black reference sensors and logic devices while simultaneously directing light toward active image sensors. This localized optimization allows the structure to perform multiple functions with a single integrated design, improving reliability without proportionally increasing overall complexity.
3Productivity
If a reversed trapezoid or concave arc shape is used for the metal shield, then light collection efficiency is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The metal shield structure utilizes specific geometric parameters (concave arc radius, trapezoid angles, shield thickness) that are optimized to achieve high light collection efficiency. By carefully selecting these parameters, the design achieves effective light redirection and shielding while remaining compatible with standard semiconductor manufacturing capabilities. The parameters are chosen to balance performance requirements with manufacturability, ensuring that the enhanced light collection efficiency does not come at the cost of excessive manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metal shield structure enhances light collection for active image sensors, increasing the intensity of light received and improving the quantum efficiency of the BSI image sensor chips.
Implementation Method 1
preventing light from reaching black reference sensors and logic devices
Implementation Method 2
allowing more light to be directed towards active image sensors by preventing light from reaching black reference sensors and logic devices
Data Source
AI summary
A device includes a semiconductor substrate having a front side and a backside. An active image sensor pixel array is disposed on the front side of the semiconductor substrate. A metal shield is disposed on the backside of, and overlying, the semiconductor substrate. The metal shield has an edge facing the active image sensor pixel array. The metal shield has a middle width, and a top width greater than the middle width.


