Semiconductor Buffer Region Tuning via Hydrogen Implant Energy
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Solution Overview
Problem
Conventional semiconductor device manufacturing methods face challenges in achieving precise control over the doping concentration distribution in the buffer region, leading to variations in breakdown voltage and reliability.
Innovation Solution
A manufacturing method involving hydrogen ion implantation with adjustable acceleration energy based on the substrate concentration index, which classifies the semiconductor substrate's oxygen and carbon chemical concentrations to form a buffer region with optimized doping concentration profiles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional doping methods are used to form the buffer region, then the manufacturing process is simple, but the doping concentration distribution cannot be precisely controlled leading to variations in breakdown voltage
Solution Approach 1:
The patent applies parameter changes by adjusting the acceleration energy of hydrogen ion implantation based on the substrate concentration index. By changing the implantation parameters (acceleration energy, dose) according to measured substrate characteristics, the method achieves precise control over doping concentration distribution in the buffer region, resolving the contradiction between manufacturing precision and process complexity.
2Reliability
If fixed acceleration energy is used for hydrogen ion implantation, then the manufacturing process is straightforward, but the breakdown voltage varies across different substrate types
Solution Approach 1:
The patent implements feedback control by measuring the substrate concentration index and using this information to adjust the hydrogen ion implantation parameters. The measured substrate characteristics feed back into the implantation process, allowing dynamic adjustment of acceleration energy to achieve consistent doping profiles and breakdown voltage across different substrate batches, thus improving reliability while maintaining operational feasibility.
3Manufacturing precision
If hydrogen ion implantation with adjustable acceleration energy is used, then the doping concentration distribution is precisely controlled, but the manufacturing process becomes more complex
Solution Approach 1:
The patent applies preliminary action by measuring the substrate concentration index before the hydrogen ion implantation process. This pre-characterization of the substrate allows the implantation parameters to be optimized in advance, ensuring precise doping concentration distribution while streamlining the overall manufacturing process through proactive rather than reactive adjustments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach stabilizes the switching characteristics and reduces variations in the semiconductor device's breakdown voltage, ensuring consistent performance across different substrate types.
Implementation Method 1
A manufacturing method involving hydrogen ion implantation with adjustable acceleration energy based on the substrate concentration index
Data Source
AI summary
A manufacturing method of a semiconductor device including a buffer region in a semiconductor substrate is provided, comprising: obtaining a substrate concentration index related to at least one of an oxygen chemical concentration or a carbon chemical concentration included in the semiconductor substrate; classifying the substrate concentration index as any index range among a predetermined plurality of index ranges; determining an acceleration energy of hydrogen ions to be implanted into the semiconductor substrate to an acceleration energy that is preset to correspond to the classified index range; and forming a buffer region of the semiconductor device by implanting hydrogen ions into the semiconductor substrate with the determined acceleration energy.