Semiconductor Module Bump Electrode Thermal Stress Distribution
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Solution Overview
Problem
The miniaturization of semiconductor devices poses challenges in reducing the pitch between electrodes on a wiring board, leading to potential heat stress concentration at the connection points between bump structures and substrates, which can deteriorate connection reliability due to thermal expansion differences.
Innovation Solution
A device mounting board with a bump electrode integrated into the wiring layer, where the electrode is projected from the wiring layer with a tapered shape and exposed surface, reducing the height at the connection area to distribute thermal stress and improve reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If a bump structure is formed on the substrate to enable narrower electrode pitch, then the electrode pitch can be reduced, but heat stress concentrates at the connection portion between the bump structure and substrate, deteriorating connection reliability
Solution Approach 1:
The wiring layer is designed with non-uniform thickness, where the thickness at the connection portion between the bump electrode and wiring layer is made thinner than other portions. This local variation in thickness distributes the heat stress generated by thermal expansion differences, preventing stress concentration at the connection interface and improving connection reliability while maintaining narrow electrode pitch
2Ease of manufacture
If the wiring layer thickness is uniform, then manufacturing is simplified, but heat stress concentrates at the connection portion, reducing connection reliability
Solution Approach 1:
The wiring layer is designed with non-uniform thickness, where the thickness at the connection portion between the bump electrode and wiring layer is made thinner than other portions. This local variation in thickness distributes the heat stress generated by thermal expansion differences, preventing stress concentration at the connection interface and improving connection reliability while maintaining narrow electrode pitch
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses thermal stress concentration, enhancing the connection reliability between the bump electrode and device electrode by distributing thermal expansion differences, thereby improving the overall reliability of the semiconductor module.
Implementation Method 1
thermal stress generated due to a difference between the coefficients of thermal expansion of the wiring layer and a semiconductor substrate
Data Source
AI summary
In a semiconductor module having the structure in which a bump electrode provided on a wiring layer is connected to a device electrode provided on a semiconductor device, connection reliability between the bump electrode and the device electrode is improved. An insulating resin layer is provided between the semiconductor device and the wiring layer. The bump electrode, formed integrally with the wiring layer and projected from the wiring layer toward the insulating resin layer, is electrically connected to the device electrode provided on the semiconductor device. Part of the height of the wiring layer on the end side in a bump connection area is lower than that of the wiring in a wiring area extending toward the side opposite to the end side.