Buried Layer in High-Voltage Well for Breakdown Voltage
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Solution Overview
Problem
As ultra-high voltage semiconductor devices scale down, it becomes challenging to achieve high breakdown voltage, low specific on-resistance, and high reliability in both room temperature and high temperature environments.
Innovation Solution
Incorporating a buried layer of a second conductivity type under the area between the source and drain regions within a high-voltage well in the semiconductor device, which enhances electron transport and improves breakdown voltage characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If device dimensions are scaled down, then device size is reduced, but breakdown voltage decreases and reliability deteriorates
Solution Approach 1:
The drift region is divided into multiple sections with alternating conductivity types (first and second conductivity types) arranged in a segmented pattern. This segmentation creates multiple breakdown paths and distributes the electric field stress, allowing the device to maintain high breakdown voltage even when overall device dimensions are scaled down.
Solution Approach 2:
Different regions of the drift region are assigned different conductivity types to create localized functional zones. The alternating pattern of first and second conductivity types in the drift region sections provides locally optimized electric field distribution and carrier transport, enabling high breakdown voltage in compact structures.
2Volume of moving object
If device dimensions are scaled down, then device size is reduced, but specific on-resistance increases
Solution Approach 1:
The drift region is divided into sections with alternating conductivity types, creating localized regions optimized for different functions. Some sections provide low-resistance carrier transport paths while others contribute to breakdown voltage, achieving low specific on-resistance in compact device dimensions.
Solution Approach 2:
The drift region employs a composite structure with alternating conductivity types (first and second conductivity types) in a segmented arrangement. This composite configuration combines the benefits of both conductivity types to simultaneously achieve low on-resistance and high breakdown voltage in scaled-down devices.
3Volume of moving object
If device dimensions are scaled down, then device size is reduced, but performance in high temperature environments deteriorates
Solution Approach 1:
The drift region is segmented into multiple sections with alternating conductivity types, creating a distributed structure that maintains stable electrical characteristics under thermal stress. This segmentation prevents localized hot spots and ensures uniform temperature distribution, improving high-temperature reliability in compact devices.
Solution Approach 2:
The alternating conductivity type structure creates a composite region that exhibits thermally stable electrical properties. The complementary nature of the alternating conductivity types provides temperature compensation effects, maintaining consistent performance across a wide temperature range in scaled-down device structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of discrete buried regions improves the smoothness of drain-source current-voltage characteristics and reduces on-state resistance, maintaining high breakdown voltage and reliability across varying temperature conditions.
Implementation Method 1
Incorporating a buried layer of a second conductivity type under the area between the source and drain regions within a high-voltage well in the semiconductor device, which enhances electron transport
Implementation Method 2
the implementation of discrete buried regions improves the smoothness of drain-source current-voltage characteristics and reduces on-state resistance, maintaining high breakdown voltage
Data Source
AI summary
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a source region disposed in the high-voltage well, a drain region disposed in the high-voltage well and spaced apart from the source region along a first direction, and a buried layer having the second conductivity type and disposed under an area between the source region and the drain region.