Semiconductor Devices TRIZ Cases

A silicon carbide MOSFET integrates a Schottky diode using shared source and junction openings to form distinct Ohmic and Schottky contacts.

Segmented gates and protective layers redistribute electric fields to lower capacitance, improving switching speed and reliability.

TiO2 silicon reflects lateral light while SiO2 silicon extracts flux, resolving low luminous output.

A nitride semiconductor device uses a zinc-doped AlGaN impurity layer to establish a specific acceptor level depth for normally-off operation.

Indium oxide transparent electrode with germanium and silicon forms ohmic contact on p-type nitride semiconductor layers.

Vapor deposition applies insulating passivation to semiconductor mesa structures, reducing leakage currents and enhancing radiation emission intensity.

A bipolar junction transistor uses a semiconductor layer with a stepped profile to self-align the emitter and base regions.

Oxynitride gate insulator with impurity peaks reduces electron traps, preventing current collapse and threshold voltage variation in GaN devices.

Varying barrier layer thicknesses in the active layer improve light extraction efficiency, resolving low luminous flux caused by poor current distribution.

Non-polar growth planes eliminate polarization effects while roughened surfaces scatter light, improving heat dissipation and luminous efficacy.

Floating P-type wells redirect avalanche breakdown from the edge area to the active region, increasing drain-to-source breakdown voltage.

Heavy doping of the silicon carrier provides reliable dielectric strength without expensive ceramic substrates.

Protruding asymmetric micro-structured elements deflect light rays at obtuse angles to increase extraction from the LED substrate.

P-type termination region increases breakdown voltage to prevent element breakdown during reverse bias while lowering forward voltage.

Self-aligned epitaxial regrowth reduces spreading resistance and etch depth variation impacts in vertical gallium nitride fin-based field effect transistors.

A laminated insulating film protects trench gate electrodes from dielectric breakdown at steep end portions.

Partial dopant implantation in the accumulation region reduces hot carrier injection and on-resistance, enhancing ultra-high voltage device reliability.

A composite thin-film encapsulation fills structural weak points in PVD layers with CVD material, preventing ion diffusion on high aspect ratio surfaces.

A stepped buffer dielectric layer reduces drain voltage in extended-drain metal-oxide-semiconductor devices.

Segmented contact regions and a p+/n+ junction suppress counter-current flow, resolving vertical loss inefficiencies in light emitting diodes.

Titanium or nickel layers absorb hydrogen and moisture, suppressing characteristic fluctuations in semiconductor devices.

Convex portions on the first semiconductor layer form a diffraction grating that disrupts total internal reflection and improves light extraction efficiency.

A GaN power transistor uses a segmented AlGaN barrier stack to create an electrostatic repulsion effect that raises the threshold voltage.

A light emitting device uses dual lower refractive index layers to redirect photons from the semiconductor structure.

A light emitting diode uses a Bragg reflector structure with inclined insulation patterns to direct emitted light toward a predetermined direction.

Segmented upper electrode with inward and outward elongated portions reduces uneven current density distribution on the light extraction surface.

An adjust region adjacent to the surface reduces peak electric fields, enabling reliable blocking voltages without increasing junction termination area.

Mandrel-based fabrication creates inverse T-shaped contacts with air gap spacers, preventing plasma damage to gate structures and reducing line resistance.

An AlGaInN and GaInN stacked body reduces threading dislocations in nitride semiconductors by embedding the light emitting unit.

Integrating multi-wavelength quantum wells on a transparent substrate merges functions to reduce package complexity while maintaining high light transmittance.

A field-effect transistor uses a crystalline oxide active layer and self-aligned gate electrodes to reduce overlap capacity.

A semiconductor device with a high-concentration region separated from the channel forming region reduces reverse leakage current.

A planar gate structure extends over a non-operating region to increase gate capacitance in silicon carbide semiconductor devices.

A buried layer photodetector uses an epitaxial intrinsic region to detect photons.

Silicon and germanium co-doping in GaN layers achieves 1e20 cm-3 carrier concentration while maintaining smooth morphology.

A buried layer under the source and drain regions enhances electron transport within a high-voltage well.

A MOS field plate trench transistor shifts the avalanche breakdown region to the trench bottom by adjusting the mesa width relative to the trench structure.

A graphene base transistor uses a compositionally graded collector barrier layer to modulate electron energy barriers and enable efficient carrier transport.

A semiconductor device employs a gradient implant region between source and drift zones to lower specific on-resistance while maintaining breakdown voltage.

A sub-gate structure electrically connected to the drain region modulates the depletion zone in high-voltage metal-oxide-semiconductor transistors.

A silicon carbide semiconductor device incorporates a lifetime killer region within the p-type epitaxial layer to control electron behavior.

A gallium oxide Schottky barrier diode uses a recessed substrate to reduce current path length and enhance heat radiation.

Thickened electrode rings act as physical barriers in flip-chip light-emitting diodes, preventing solder paste overflow and short-circuits during packaging.

Counter-doped regions divide the drift area to reduce impact ionization and increase breakdown voltage.

A light-emitting semiconductor component with directly bonded first and second bodies for efficient electromagnetic radiation conversion.

A trench semiconductor device uses a shaped gate dielectric region to reduce leakage currents and improve breakdown voltage stability.

Concavo-convex substrates and thermal support members resolve the trade-off between light extraction efficiency and heat dissipation in III-V nitride LEDs.

A light extracting structure layer with concave-convex design redirects light outward from semiconductor layers.

A GaN heterojunction bipolar transistor uses polarization and doping to form a two-dimensional hole gas in the base region.