Semiconductor Gradient Implant Region for Breakdown Voltage
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Solution Overview
Problem
As ultra-high voltage semiconductor devices scale down, it becomes challenging to achieve high breakdown voltage, low specific on-resistance, and high reliability in both room temperature and high temperature environments.
Innovation Solution
A semiconductor device with a substrate having a first conductivity type, a high-voltage well of a second conductivity type, a source well of the first conductivity type, a drift region, and a gradient implant region of the second conductivity type disposed between the source well and the drift region, which is formed using specific doping concentrations and depths to enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If device dimensions are scaled down, then device size is reduced, but breakdown voltage decreases and specific on-resistance increases
Solution Approach 1:
The patent applies local quality by creating a gradient implant region with varying doping concentrations in different spatial locations. The doping concentration transitions from higher near the source well to lower near the drift region, optimizing each local area's electrical characteristics to maintain high breakdown voltage despite overall device scaling.
Solution Approach 2:
The patent changes the doping concentration parameter continuously across the gradient implant region. By varying the doping concentration from 1e16 to 1e18 atoms/cm³ across different regions, the patent achieves optimized electrical field distribution that maintains high breakdown voltage while enabling smaller device dimensions.
2Volume of moving object
If device dimensions are scaled down, then device size is reduced, but specific on-resistance increases
Solution Approach 1:
The gradient implant region creates local quality variations where doping concentration is optimized at different positions. The higher doping concentration near the source well reduces on-resistance in the high-current-density area, while lower concentration near the drift region maintains high breakdown voltage.
Solution Approach 2:
By continuously changing the doping concentration parameter across the gradient implant region, the patent achieves a balance between on-resistance and breakdown voltage. The parameter transition optimizes current flow in the source region while maintaining voltage blocking capability in the drift region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves a 10.6% higher drain current at 1V and 10.6% lower specific on-resistance compared to comparative devices, while maintaining similar breakdown characteristics, thus addressing the challenges of scaling down while maintaining performance.
Implementation Method 1
forming a gradient implant region having the second conductivity type and disposed in the high-voltage well between the source well and the drift region
Data Source
AI summary
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a source well having the first conductivity type disposed in the high-voltage well, a drift region disposed in the high-voltage well and spaced apart from the source well, and a gradient implant region having the second conductivity type and disposed in the high-voltage well between the source well and the drift region.