Schottky Barrier Diode Hydrogen Absorber Layer
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Solution Overview
Problem
Semiconductor devices with Schottky barrier diodes experience fluctuations in characteristics due to impurity movement, such as moisture and hydrogen, affecting the reliability and stability of the device.
Innovation Solution
Incorporating a first layer of titanium, nickel, or vanadium between the base electrode and an insulating layer containing silicon and nitrogen or oxygen, which acts as a hydrogen absorber, and extending this layer to the semiconductor regions, to prevent impurity movement and stabilize the Schottky barrier diode characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a Schottky barrier diode is formed using a base electrode and semiconductor region, then the diode exhibits rectifying characteristics, but impurity movement (such as hydrogen and moisture) causes fluctuation in device characteristics
Solution Approach 1:
A barrier layer is introduced between the base electrode and the semiconductor region to act as an intermediary that prevents impurity movement. This barrier layer blocks hydrogen and moisture from reaching the Schottky barrier interface, thereby stabilizing the diode characteristics without affecting the rectifying function.
Solution Approach 2:
The barrier layer is formed in advance before final device assembly to preemptively prevent impurity contamination. By establishing this protective layer prior to operation, the device is protected against future impurity ingress that would otherwise cause characteristic fluctuation.
2Reliability
If impurity movement is prevented by adding barrier layers, then characteristic fluctuation is suppressed, but device structure becomes more complex
Solution Approach 1:
The barrier layer is applied locally only at the critical Schottky barrier interface where impurity movement causes problems, rather than throughout the entire device. This localized approach prevents characteristic fluctuation while minimizing the increase in overall device complexity.
Solution Approach 2:
The barrier layer is formed using composite material structures (such as titanium nitride and silicon nitride layers) that provide effective impurity blocking properties. These composite structures achieve superior barrier performance with controlled thickness and composition, balancing protection needs with structural simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses the fluctuation of semiconductor device characteristics, enhancing the reliability by preventing hydrogen and moisture from reaching the interface, thereby stabilizing the Schottky barrier diode and maintaining consistent performance.
Implementation Method 1
a first layer extending from the base electrode to the semiconductor region, the first layer comprising at least one selected from the group consisting of titanium, nickel, and vanadium
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a first electrode, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a second electrode, and a third electrode. The first semiconductor region includes a first region and a second region. The second semiconductor region is provided on the second region. The third semiconductor region is provided on a portion of the second semiconductor region. The third electrode is provided on the second semiconductor region and the first semiconductor region. A first layer is provided on the third electrode. The first layer includes at least one selected from the group consisting of titanium, nickel, and vanadium. A second layer is provided on the first layer. The second layer includes silicon and at least one selected from the group consisting of nitrogen and oxygen.