Convex Semiconductor Light Extraction Surface
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Solution Overview
Problem
Current semiconductor light emitting elements face challenges in enhancing light extraction efficiency, which is crucial for improving their performance and efficiency.
Innovation Solution
The semiconductor light emitting element incorporates a stacked body with a first semiconductor layer having convex portions and a light emitting layer, where the convex portions form a diffraction grating on the light extraction surface, and electrodes are strategically positioned to enhance light extraction efficiency by controlling the reflection and scattering of light.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a conventional flat light extraction surface is used, then the device structure is simple, but light extraction efficiency is low due to total internal reflection
Solution Approach 1:
The patent applies curvature by forming convex portions (protrusions) on the light extraction surface of the semiconductor layer. These convex portions create a non-planar, curved surface that disrupts total internal reflection and enhances light extraction efficiency. The convex portions have specific dimensional parameters (height h1, width w1, interval d1) optimized to maximize light extraction while maintaining structural integrity.
Solution Approach 2:
The light extraction surface is segmented into multiple convex portions rather than being a continuous flat surface. This segmentation creates multiple light extraction pathways and angles, allowing light to escape more efficiently at different locations and orientations, thereby reducing the overall internal reflection losses in the device.
2Loss of energy
If convex portions are added to the light extraction surface, then light extraction efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The convex portions are formed on the light extraction surface before the semiconductor layer is bonded to the substrate. This preliminary formation of the convex structure allows for easier manufacturing, as the protrusions can be created on the free-standing layer using standard lithography and etching techniques before the complex bonding process occurs, avoiding the need to create three-dimensional structures after assembly.
3Reliability
If electrodes are positioned to cover convex portions, then electrical connection is improved, but light absorption by electrodes increases
Solution Approach 1:
The patent applies local quality by creating spatial differentiation between electrode coverage areas and convex portion areas. The electrodes are positioned to cover only specific regions (first and second regions) while leaving the convex portions (third region) exposed. This local differentiation allows optimal electrical connection in electrode-covered areas while preserving light extraction efficiency in convex portion areas where metal coverage is minimized.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves light extraction efficiency by optimizing the light distribution and reducing absorption, leading to enhanced performance and efficiency in semiconductor light emitting elements.
Implementation Method 1
the convex portions form a diffraction grating on the light extraction surface
Implementation Method 2
a light emitting layer (30), wherein the light emitting layer is provided between the second portion and the second semiconductor layer
Data Source
AI summary
A semiconductor light emitting element includes a substrate and a stacked body. The stacked body is aligned with the substrate. The stacked body includes first and second semiconductor layers, a light emitting layer, and first and second electrodes. The first semiconductor layer has a first face including first and second portions. The first portion is provided with a plurality of convex portions. The second portion is aligned with the first portion. The second semiconductor layer is provided facing the second portion. The light emitting layer is provided between the second portion and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the light emitting layer. An interval of each of the convex portions is no less than 0.5 times and no more than 4 times a wavelength of a light emitted from the light emitting layer.