Direct-Bonded Semiconductor Light-Emitting Component
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Solution Overview
Problem
Existing light-emitting semiconductor components face inefficiencies in light generation and conversion due to intermediate layers that cause Stokes losses, overheating, and coupling losses, limiting their ability to produce high-efficiency polychromatic or monochromatic light.
Innovation Solution
A light-emitting semiconductor component comprising a first nitride compound semiconductor body for generating electromagnetic radiation and a second semiconductor body for down-conversion, where the two bodies are produced separately and directly bonded without intermediate layers, allowing for efficient light coupling and heat dissipation through strong chemical bonds, minimizing thermal resistances and Stokes losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If intermediate layers are used to bond the first and second semiconductor bodies, then the bonding process is easier, but Stokes losses increase and light conversion efficiency decreases
Solution Approach 1:
The patent removes the intermediate bonding layer from the system entirely, achieving direct bonding between the first and second semiconductor bodies. This extraction of the harmful intermediate layer eliminates Stokes losses while the direct bonding process itself provides sufficient ease of manufacture through standardized direct bonding techniques.
Solution Approach 2:
The patent uses direct chemical bonding as the intermediary mechanism between the two semiconductor bodies, eliminating the need for separate intermediate layers. The direct bonding creates strong chemical bonds that provide both mechanical strength and optimal optical coupling without the harmful effects of traditional intermediate bonding layers.
2Temperature
If intermediate layers are used for bonding, then thermal resistance increases causing overheating, but removing them requires more complex bonding processes
Solution Approach 1:
The patent extracts and removes the intermediate bonding layer that causes thermal resistance and overheating. By achieving direct bonding between the semiconductor bodies, the system eliminates the thermal barrier while the standardized direct bonding process maintains manufacturing feasibility.
Solution Approach 2:
The patent replaces mechanical bonding methods with chemical bonding mechanisms, creating direct chemical bonds between the semiconductor bodies. This substitution eliminates the need for intermediate mechanical bonding layers that impede heat flow, while the chemical bonding process remains manufacturable through established semiconductor fabrication techniques.
3Device complexity
If the second semiconductor body is grown epitaxially on the first, then integration is simpler, but structural height increases and light coupling efficiency decreases
Solution Approach 1:
The patent segments the semiconductor structure into two separately produced bodies that are subsequently bonded together. This segmentation allows each body to be optimized independently and bonded with precise control over the interface, reducing the overall structural height compared to continuous epitaxial growth while maintaining integration through direct bonding.
Solution Approach 2:
The patent transitions from vertical epitaxial growth in one dimension to horizontal bonding in another dimension. By producing the semiconductor bodies separately and bonding them through a controlled interface, the system achieves integration without the height penalty of continuous vertical growth, effectively using dimensional transition to solve the contradiction.
4Strength
If intermediate layers are used for bonding, then bonding strength is sufficient, but light coupling efficiency and heat dissipation are compromised
Solution Approach 1:
The patent removes the intermediate bonding layer that compromises light coupling efficiency. Direct bonding between the semiconductor bodies achieves both sufficient mechanical strength and optimal optical coupling by eliminating the refractive index mismatch and absorption losses introduced by intermediate layers.
Solution Approach 2:
The patent uses direct chemical bonds as the intermediary between the two semiconductor bodies, replacing traditional intermediate bonding layers. These direct chemical bonds provide both the necessary mechanical strength and the optimal optical properties for efficient light coupling, serving dual functions without compromise.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light conversion efficiency, reduces structural height, and enables the generation of high-intensity, polychromatic or monochromatic light with minimized losses, making it suitable for direct backlighting of imaging elements like LCD panels and efficient heat dissipation.
Implementation Method 1
The first semiconductor body comprises at least one active zone, in which electromagnetic radiation is generated during the operation of the light-emitting semiconductor component
Implementation Method 2
the second semiconductor body is suitable for converting the electromagnetic radiation generated in the at least one active zone of the first semiconductor body. In this case, the electromagnetic radiation which leaves the first semiconductor body through the radiation exit area is at least partly converted into electromagnetic radiation having a longer wavelength
Implementation Method 3
first semiconductor body and second semiconductor body are in direct contact with one another... fixed to the first semiconductor body there in a manner free of connecting means... minimizing thermal resistances
Data Source
AI summary
The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.