Semiconductor Device Trench JBS Diode Reverse Bias Protection
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Solution Overview
Problem
Existing semiconductor devices face challenges in preventing element breakdown during reverse bias, particularly due to lower junction breakdown voltages in the element region compared to the termination structure, which can lead to increased reverse current and forward voltage.
Innovation Solution
A semiconductor device design featuring a trench-type junction barrier Schottky diode with a p-type region in the bottom of a trench, a p+-type anode region, and a p-type RESURF region with a higher impurity concentration in the termination area, along with a silicide layer and field oxide film, to enhance breakdown voltage and reduce reverse current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the junction breakdown voltage of the element region is lowered to prevent element breakdown, then element protection is improved, but reverse current and forward voltage increase
Solution Approach 1:
The patent applies local quality by confining the higher impurity concentration p-type region specifically to the termination region, while maintaining the element region's lower impurity concentration. This spatial differentiation allows the element region to maintain its optimal breakdown voltage characteristics without the adverse effects of increased reverse current and forward voltage that would result from uniformly increasing breakdown voltage throughout the entire device.
Solution Approach 2:
The patent segments the semiconductor device into distinct regions with different impurity concentrations: the element region with lower concentration for optimal breakdown voltage, and the termination region with higher concentration for enhanced field control. This segmentation allows each region to be optimized independently, preventing element breakdown while maintaining acceptable reverse current and forward voltage characteristics in the element region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively prevents element breakdown during reverse bias, reduces reverse current, and lowers forward voltage by increasing the breakdown voltage and improving the trade-off between forward voltage and reverse current.
Implementation Method 1
By providing the PIN diode section in the element region, it is possible to make a large surge current flow through the PIN diode section by modulating the conductivity of the PIN diode section.
Implementation Method 2
a termination structure is provided in a termination region in the periphery of an element region, in order to reduce the strength of an electric field in an end portion of the element region at the time of a reverse bias
Data Source
AI summary
A semiconductor device includes a semiconductor layer having a first surface and a second surface, a first electrode on the first surface, a second electrode on the second surface, a first semiconductor region of a first conductivity type in the semiconductor layer, a second semiconductor region of a second conductivity type in an element region of the semiconductor layer between the first semiconductor region and the first electrode, a third semiconductor region of the second conductivity type between the second semiconductor region and the first electrode, and a fourth semiconductor region of the second conductivity type in a termination region of the semiconductor layer inwardly of the first surface. A distance between the fourth semiconductor region and the second surface is greater than a distance between the second semiconductor region and the second surface.