Buried Through-Electrode Layout for Dense Semiconductor Interconnects
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices face challenges in achieving high integration density and performance due to limitations in interconnection structures and through-electrode designs, which affect signal path length and electrical performance.
Innovation Solution
The semiconductor device incorporates a semiconductor substrate with multiple interconnection layers and through-electrodes, including buried structures and insulating spacers, to enhance interconnection efficiency and penetration through the substrate, allowing for increased integration density and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If through-electrodes are used to penetrate the semiconductor substrate, then signal path length is shortened, but manufacturing complexity increases
Solution Approach 1:
The through-electrode structure is segmented into multiple functional layers: a first through-electrode penetrating from the first side to the second side, a second through-electrode extending from the second side to contact the conductive line, and insulating spacers dividing the substrate thickness into first and second regions. This segmentation allows independent optimization of each segment for signal transmission efficiency while managing manufacturing complexity.
Solution Approach 2:
The patent introduces vertical dimensionality by having through-electrodes penetrate through the substrate thickness direction, creating three-dimensional interconnection paths. The insulating spacers further divide the vertical space into first and second regions, enabling complex routing in the vertical dimension rather than only lateral routing, thus shortening signal paths while organizing complexity vertically.
2Quantity of substance
If multiple interconnection layers and through-electrodes are added, then integration density increases, but manufacturing difficulty increases
Solution Approach 1:
The conductive line is formed within the substrate before the through-electrodes are created. The insulating spacers are also formed in advance to define the first and second regions. This preliminary formation of conductive paths and insulation structures simplifies subsequent through-electrode fabrication by providing pre-defined routing paths and isolation zones, reducing overall manufacturing difficulty despite high integration density.
Solution Approach 2:
The insulating spacers act as intermediaries that physically separate and electrically isolate different conductive elements. By introducing these intermediary insulation structures, the patent enables multiple through-electrodes and conductive lines to coexist in close proximity without electrical interference, thus increasing integration density while maintaining manufacturability through clear isolation boundaries.
3Reliability
If through-electrodes directly contact conductive lines, then electrical performance improves, but precision requirements increase
Solution Approach 1:
The insulating spacers are formed beforehand to create protective isolation regions around the through-electrodes and conductive lines. These spacers cushion against misalignment by providing physical barriers and tolerance zones, ensuring that even with manufacturing variations, direct electrical contact between through-electrodes and conductive lines is maintained reliably, thus improving electrical performance while reducing precision requirements.
Data Source
AI summary
A semiconductor device includes: a semiconductor substrate having opposing first side and second sides; an active region and an isolation region on the first side; a circuit device on the active region; a front side interconnection structure on the first side and including front side interconnection layers disposed on different levels; first and second back side interconnection structures below the second side; a buried structure having a portion disposed in the isolation region and including a conductive line; a first through-electrode structure including a first through-electrode contacting the conductive line and penetrating the semiconductor substrate between the conductive line and the first back side interconnection structure; and a second through-electrode structure including a second through-electrode penetrating the semiconductor substrate between a first front side interconnection layer and the second back side interconnection structure. The first front side interconnection layer is on a level higher than that of the conductive line.