C-Shaped Confinement Liner for Plasma Chamber

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

In semiconductor substrate processing, unconfined plasmas lead to etch-byproduct deposition on chamber walls, causing contamination and particle issues, which necessitate additional downstream cleaning, reducing process throughput and increasing costs.

Innovation Solution

The use of C-shaped confinement liners with a contoured inner surface and radial slots to effectively confine the plasma within the processing region, made from materials like silicon carbide or polysilicon to reduce contamination and provide a ground path for RF power.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If unconfined plasma is used in processing, then the plasma can cover larger area, but etch-byproduct deposition on chamber walls increases causing contamination and particle issues

Engineering Contradiction:
Improveplasma coverage areaVSAvoidetch-byproduct deposition
Core Design Contradiction:
Area of stationary objectVSObject-generated harmful factors

Solution Approach 1:

A confinement liner is introduced as an intermediary component between the plasma and chamber walls. The liner is positioned to confine plasma within the processing region, preventing direct contact between plasma and chamber walls, thereby eliminating etch-byproduct deposition on walls while maintaining adequate plasma coverage area

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The confinement liner is divided into multiple segments including an upper liner and a lower liner with radial slots. This segmentation allows the liner to effectively confine plasma in the processing region while permitting necessary gas flow and plasma passage through the radial slots, achieving both plasma confinement and adequate coverage

Inventive Principle:
Principle #1Segmentation

2Object-generated harmful factors

If confinement liner is added to control plasma, then etch-byproduct deposition is reduced, but device complexity increases

Engineering Contradiction:
Improveetch-byproduct depositionVSAvoidchamber structure complexity
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The confinement liner is designed as a thin-walled structure with radial slots that can flexibly adapt to the chamber geometry. This thin-film approach provides effective plasma confinement without adding significant structural complexity or weight to the chamber system

Inventive Principle:
Principle #30Flexible shells and thin films

Solution Approach 2:

The lower liner incorporates radial slots that function as a porous structure, allowing gas flow and plasma passage while maintaining the confinement function. This slot design reduces structural complexity compared to a fully solid barrier while achieving the desired plasma control

Inventive Principle:
Principle #31Porous materials

3Object-generated harmful factors

If additional downstream cleaning is implemented to remove particles, then particle issues are addressed, but process throughput decreases

Engineering Contradiction:
Improveparticle contaminationVSAvoidprocess throughput
Core Design Contradiction:
Object-generated harmful factorsVSProductivity

Solution Approach 1:

The confinement liner performs preliminary action by preventing etch-byproduct deposition on chamber walls during the processing step itself. By confining plasma and preventing wall contact beforehand, the liner eliminates the source of particles that would otherwise require downstream cleaning removal, thereby maintaining high process throughput

Inventive Principle:
Principle #9Preliminary anti-action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively confines the plasma, minimizing etch-byproduct deposition on chamber walls, reducing contamination and particle issues, and enhancing process efficiency by maintaining a clean environment and reducing the need for additional downstream cleaning.

Implementation Method 1

made from materials like silicon carbide or polysilicon to reduce contamination and provide a ground path for RF power

Methodology Applied
Scientific EffectElectrical Conduction: Conduction (electrical)

Implementation Method 2

the lower liner extends radially inward from the tubular body and includes a plurality of radial slots arranged around the lower liner

Methodology Applied
Scientific EffectGas Flow through slots:

Data Source

PatentUS11380524B2Low resistance confinement liner for use in plasma chamber
Publication Date: 2022.07.05 APPLIED MATERIALS INC
  • US11380524B2 patent drawing
  • US11380524B2 patent drawing
  • US11380524B2 patent drawing

AI summary

Embodiments of liners for use in a process chamber are provided herein. In some embodiments, a liner for use in a process chamber includes an upper liner having a top plate with a central opening and a tubular body extending downward from an outer peripheral portion of the top plate, wherein the top plate has a contoured inner surface having a first step with a first inner diameter and a second step with a second inner diameter greater than the first inner diameter, and wherein the tubular body has an opening for transferring a substrate therethrough; and a lower liner abutting a bottom surface of the tubular body, wherein the lower liner extends radially inward from the tubular body and includes a plurality of radial slots arranged around the lower liner, wherein the upper liner and the lower liner form a C-shaped cross-section.