Electric Discharge Tubes TRIZ Cases

Virtual cathode deposition uses gas plasma to generate electron beams that ablate targets, extending cathode lifespan by preventing contamination.

Electron channeling patterns map crystal orientation to determine offcut angle, replacing slow X-ray diffraction for semiconductor process monitoring.

Forming an oxide layer on silicon nitride films prevents etching damage while enabling selective removal of titanium nitride layers using halogen gases.

Segmented targets getter residual oxygen during sputtering, stabilizing resistance values in MRAM memory devices.

Sensors detect multi-directional motion between plug and receptacle electrodes to identify wear from vibration-induced movement.

Segmenting the faceplate into two plenums with distinct channel geometries achieves uniform edge-to-center gas flow without increasing structural complexity.

A plasma processing apparatus matching device uses weighted average load impedance measurements to control input power ratios during pulse modulation.

A substrate processing apparatus applies high-frequency RF voltage superposed with a dual-pulse waveform to control ion energy.

Circulating coolant through integrated flow paths in the shutter and deposition shield manages thermal loads from high-frequency bias power.

Concentric conic gas flows and annular exhaust separation resolve unsymmetrical gas distribution and non-uniform etching in plasma etch chambers.

Segmented isolation plate with integrated lip prevents stray arcing by isolating fasteners and maintaining a consistent ground path.

Radial slots in a C-shaped liner confine plasma to prevent etch-byproduct deposition on chamber walls.

Counter-movement deflections and varying scan schemes reduce charging effects and enhance signal-to-noise ratio in electron beam imaging.

A gliding plasma stripper removes fiber coatings using a controlled non-thermal arc between ribbed electrodes.

A power converter unit delivers bipolar output to multiple plasma chambers via a control device managing pulse sequences.

A unitary lower shield encircles the sputtering target and substrate support to improve thermal conductivity within semiconductor processing chambers.

Threaded coupling stabilizes the measurement unit on the dielectric sheet, resolving loose fitting issues that degrade etching precision.

A computation device extracts pattern centroids from beam data and aligns them with generated reference data to measure dimensions.

Angular energy filter electrodes use reacting gas and ion beam heat to stabilize films, preventing contamination during ion implantation.

Remote plasma effluents selectively etch titanium nitride with high selectivity while conditioning chamber surfaces to prevent substrate damage.

Angled ion beam patterning selectively elongates semiconductor cavities to reduce overlay errors and mask count.

A multi-plate faceplate design segments conical openings to enable uniform protective coating application on internal surfaces.

Capillary wicking structures in the chuck cavity enable stable two-phase flow and uniform heat transfer for cryogenic liquid evaporation.

Thermoelectric feedback drives piezoelectric nozzles to balance local flow velocities, eliminating temperature distribution non-uniformity.

One flat side surface on the rounded bar plunger prevents erroneous assembly while reducing fabrication cost and workload.

Segmenting the eroding dielectric tube from the reusable RF coil reduces maintenance costs while extending component service life.

An immersed single-turn RF coil generates low-energy electrons in a dielectric chamber, eliminating metal contamination during ion implantation.

Periodic pulsed power stabilizes reactive gas pressure and prevents target poisoning during high-rate oxide coating deposition.

A magnetron assembly divides magnets into independent linear arrays to optimize magnetic flux distribution across the target surface.

A charged particle microscope uses a barometric sensor and automatic controller to adjust specimen holder position.

Heat-treated crystalline alloy target prevents fracture by stabilizing microstructure against localized crystallization.

Defocusing the STEM image reveals detector segment directions via positional deviation, eliminating CCD cameras and reducing measurement time.

Segmented remote plasma generation reduces electric arc damage while maintaining trench penetration capability.

Segmented plasma deposition resolves film quality variation in high aspect-ratio features using intermediate hydrogen and nitrogen treatments.

Segmenting deposition into an oriented seed phase and a free-growth phase resolves the contradiction between axis precision and low deposition rates.

A segmented atomic layer etching process modifies III-V surfaces with chlorine plasma before bias-driven removal.

Parallel inductor-capacitor circuit adjusts coil currents via resonance, replacing mechanical parts to lower costs and improve reliability.

Retaining oxide layers during sputter etching eliminates time-consuming cleaning steps while thermal diffusion enhances peel strength.

Ionized conductive fiber tips attach section ribbons to grids, eliminating manual dexterity requirements and reducing rejection rates.

Dual electrode sets create uniform plasma to resolve non-uniform coating thickness and poor solderability in PCB manufacturing.

An oxide semiconductor film provides conductive and insulative regions to protect terminal lines on a display array substrate.

An in situ magnetron sputter deposition module coats cryogenic samples without heating, eliminating contamination risks during transfer.

A high-power pulsed magnetron sputtering process applies complex discharge pulses to ionize gas and sputter target material.

Embedded heaters and cooling channels in the flange prevent precursor condensation and seal degradation, reducing particle generation in gas-phase reactors.

Segmented magnets form open magnetic fields that guide electrons horizontally, ensuring uniform thin film deposition on recess inner walls.

A porous insert moderates electrical field strength and absorbs corrosive radicals within the showerhead assembly.

Oversized detector elements capture beam signals during stage movement, resolving throughput and accuracy trade-offs in multi-beam inspection.

A phosphorus-containing protective layer shields substrate side walls during plasma processing to prevent unwanted lateral erosion.

Controlling CF2 to C2 radical emission ratios above 3.5x during C2F4 plasma etching maintains constant bowing critical dimensions and prevents mask closure.