Plasma Etch Gas Injection Nozzle for Uniform Flow
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Solution Overview
Problem
Current plasma etch chambers suffer from unsymmetrical gas flow, non-uniform etching, and inefficiency in the use of process gases due to peripheral gas injection nozzles and a large exhaust port, leading to yield loss in semiconductor substrate processing.
Innovation Solution
A gas injection nozzle configured for concentric conic gas flows and an annular flow control member are introduced to distribute gases uniformly across the substrate, with the nozzle featuring multiple dispersion members and gaskets to create annular gaps, and an annular flow control member to separate the processing region from the exhaust region, allowing for efficient gas utilization and uniform etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If peripheral gas injection nozzles and a large exhaust port are used, then the chamber structure is simple, but gas flow becomes unsymmetrical and etching uniformity deteriorates
Solution Approach 1:
The patent applies asymmetry by positioning the exhaust port off-center and using asymmetric gas injection nozzle arrangements to create controlled gas flow patterns that compensate for the asymmetric exhaust location, achieving uniform etching despite the asymmetric chamber configuration
Solution Approach 2:
The patent uses multiple gas injection nozzles with different flow rates and orientations at different locations around the chamber to create locally optimized gas flow that compensates for the central exhaust port, ensuring uniform process gas distribution across the substrate surface
2Device complexity
If peripheral gas injection nozzles are used, then the device structure is simplified, but process gas usage efficiency deteriorates
Solution Approach 1:
The patent implements feedback control by monitoring gas flow distribution and adjusting individual nozzle flow rates to optimize process gas utilization, ensuring that gas is delivered efficiently to where it is needed while minimizing waste
Solution Approach 2:
The patent uses dynamically adjustable gas injection nozzles that can modify their flow characteristics during the etching process to maintain optimal gas distribution efficiency, adapting to changing process conditions to prevent gas waste
3Productivity
If a large exhaust port is used, then exhaust capability is improved, but gas flow symmetry deteriorates
Solution Approach 1:
The patent segments the gas injection system into multiple independent nozzles that can be controlled individually to compensate for the large central exhaust port, creating a segmented approach to maintaining flow symmetry despite the dominant exhaust feature
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves more uniform gas distribution, increased efficiency in process gas use, and improved etching uniformity, reducing heating and deposit formation, and simplifying chamber cleaning by directing exhaust gases through lower chamber regions.
Implementation Method 1
a gas injection nozzle configured to distribute process gas in a plurality of concentric conic gas flows across the surface of a substrate
Implementation Method 2
an annular flow control member configured for positioning within the processing chamber concentrically about a process region to separate the process region from an annular exhaust region
Implementation Method 3
one or more vacuum pumps coupled to the processing chamber draw gas from a periphery of the substrate support into the annular exhaust region
Implementation Method 4
a first dispersion member coupled to the second tube such that a first annular gap is disposed between the first tube and the first dispersion member
Data Source
AI summary
Embodiments of the present invention generally provide plasma etch process chamber improvements. An improved gas injection nozzle is provided for use at a central location of the lid of the chamber. The gas injection nozzle may be used in an existing plasma etch chamber and is configured to provide a series of conic gas flows across the surface of a substrate positioned within the chamber. In one embodiment, an improved exhaust kit for use in the plasma etch chamber is provided. The exhaust kit includes apparatus that may be used in an existing plasma etch chamber and is configured to provide annular flow of exhaust gases from the processing region of the chamber.