Unitary Lower Shield for Semiconductor Chamber Thermal Control

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Solution Overview

Problem

Conventional semiconductor processing chambers face issues with sputtered material deposition on chamber components, thermal control of shields, and gas conductance, leading to contamination, plasma shorting, and reduced process uniformity due to poor thermal conductivity and increased temperature fluctuations.

Innovation Solution

A process kit comprising a lower shield, deposition ring, and cover ring designed to encircle the sputtering target and substrate support, featuring a unitary construction for improved thermal conductivity, reduced deposition on internal components, and enhanced gas flow pathways to prevent plasma leakage and line-of-sight deposition.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If conventional shields made of low thermal conductivity material are used, then thermal insulation is improved, but temperature control deteriorates and temperature fluctuations increase

Engineering Contradiction:

Improvethermal insulationVSAvoidtemperature control

Core Design Contradiction:

Loss of energyVSTemperature

Solution Approach 1:

The patent merges the shield and chamber liner into a single integrated component made of high thermal conductivity material. This integration eliminates thermal resistance at interfaces and allows for effective thermal control while maintaining insulation properties, resolving the contradiction between thermal insulation and temperature control.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The patent changes the thermal conductivity parameter of the shield material from low to high. By using materials with high thermal conductivity (such as aluminum or aluminum alloys), the shield achieves both good thermal insulation and effective temperature control, eliminating temperature fluctuations and preventing deposit flaking.

Inventive Principle:

Principle #35Parameter changes

2Quantity of substance

If process kit components are designed to receive larger amounts of accumulated deposits, then deposition tolerance is improved, but cleaning complexity increases

Engineering Contradiction:

Improvedeposition toleranceVSAvoidcleaning complexity

Core Design Contradiction:

Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent designs the shield with a smooth, non-stick surface that allows accumulated deposits to be easily discarded through simple rinsing or wiping. The unitary construction with no crevices or complex geometries enables rapid cleaning recovery, allowing the component to tolerate large amounts of deposition between cleanings without increasing cleaning complexity.

Inventive Principle:

Principle #34Discarding and recovering

3Reliability

If unitary construction is used for shields, then thermal conductivity is improved, but manufacturing complexity increases

Engineering Contradiction:

Improvethermal conductivityVSAvoidmanufacturing complexity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent combines the shield and liner into a single unitary component that can be manufactured as one piece using standard fabrication processes. This unitary construction eliminates interface thermal resistance and ensures reliable thermal conductivity while maintaining ease of manufacture through simple, integrally-formed geometries without complex assembly requirements.

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The process kit reduces RF harmonics and stray plasma outside the process cavity, promoting greater process uniformity, longer chamber component life, and easier cleaning by minimizing sputtered material accumulation and temperature fluctuations.

Implementation Method 1

In PVD chambers, a target is sputtered by energized gas to sputter target material which then deposits on the substrate facing the target

Methodology Applied

Scientific EffectSputtering: Sputtering

Implementation Method 2

a target is sputtered by energized gas to sputter target material which then deposits on the substrate

Methodology Applied

Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Implementation Method 3

unitary construction for improved thermal conductivity

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS9476122B2Wafer processing deposition shielding components

Publication Date: 2016.10.25 APPLIED MATERIALS INC

AI summary

Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.