Pattern Measurement Device Using Virtual Reference Alignment
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Solution Overview
Problem
Current patterning methods, such as DSA and SAxP, lack effective evaluation techniques for patterns not provided in a photomask, particularly for self-aligned and self-derivative assembly processes, which are crucial for advanced semiconductor manufacturing.
Innovation Solution
A pattern measurement device and computer program that measure dimensions and position deviations of patterns formed in a sample using beam-irradiated data, extracting centroids and aligning them with reference data to assess pattern dimensions and alignment accurately.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If advanced patterning methods (DSA, SADP, SAQP) are used to form fine patterns beyond lithography limits, then pattern density and integration are improved, but measurement and evaluation capability deteriorates due to lack of reference patterns in photomask
Solution Approach 1:
The patent introduces a computational intermediary that bridges the gap between photomask design data and actual sample patterns. The computation device generates virtual reference patterns from design data and uses these as intermediaries to align and measure actual patterns, enabling measurement capability without physical reference patterns in the photomask.
Solution Approach 2:
The patent creates virtual copies of reference patterns through computational generation from design data. These copied reference patterns are then overlaid on measured sample data to enable alignment and measurement, eliminating the need for physical reference patterns in the photomask while maintaining measurement accuracy.
2Quantity of substance
If self-aligned processes are used to multiply patterns (2x, 4x, 8x), then pattern density increases, but evaluation complexity increases due to multiple process steps and materials
Solution Approach 1:
The patent changes the evaluation approach from physical/process-based to computational/parameter-based. By using design data parameters to generate virtual reference patterns and aligning them with measured data, the system simplifies evaluation of complex multi-step self-aligned processes into a unified computational alignment task.
Solution Approach 2:
The patent replaces complex physical evaluation processes with computational methods. Instead of using physical reference patterns and manual measurement processes, the system uses computational generation of reference patterns and automated alignment algorithms to evaluate multi-step self-aligned patterning processes.
3Ease of operation
If photomask-based lithography is used for pattern transfer, then process simplicity is maintained, but pattern resolution is limited by wavelength
Solution Approach 1:
The patent adds a computational dimension to the traditional photomask-based lithography process. By generating virtual reference patterns from design data and using them for alignment and measurement, the system extends the capabilities of simple photomask lithography to achieve evaluation of advanced fine-pattern processes without requiring complex physical reference structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables comprehensive evaluation of patterns formed by advanced patterning methods, improving manufacturing yield and device performance by accurately measuring and correcting position and dimension errors.
Implementation Method 1
measures dimensions between patterns formed in a sample, by using data which is obtained by irradiating the sample with a beam
Data Source
AI summary
The purpose of the present invention is to provide a pattern measurement device which adequately evaluates a pattern formed by means of a patterning method for forming a pattern that is not in a photomask. In order to fulfil the purpose, the present invention suggests a pattern measurement device provided with a computation device for measuring the dimensions between patterns formed on a sample, wherein: the centroid of the pattern formed on the sample is extracted from data to be measured obtained by irradiating beams; a position alignment process is executed between the extracted centroid and measurement reference data in which a reference functioning as the measurement start point or measurement end point is set; and the dimensions between the measurement start point or the measurement end point of the measurement reference data, which was subjected to position alignment, and the edge or the centroid of the pattern contained in the data to be measured is measured.