Silicon Nitride Deposition via Intermediate Plasma Treatment
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Solution Overview
Problem
Silicon nitride layers deposited using plasma-enhanced atomic layer deposition (PEALD) on high aspect-ratio features exhibit high variation in film quality, poor step coverage, and undesirable film thickness variation, leading to voids and seams, as well as high wet etch rates, which are not adequately addressed by existing techniques.
Innovation Solution
A method involving a substrate treatment process within a reaction chamber, where silicon and nitrogen precursors are pulsed with deposition plasma, followed by intermediate and second plasma treatments, including hydrogen and nitrogen reactants, to control plasma power and flow rates, ensuring uniform film quality and improved gap fill properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma-enhanced atomic layer deposition (PEALD) is used to deposit silicon nitride on high aspect-ratio features, then deposition rate and low temperature operation are improved, but film quality variation and wet etch rate uniformity deteriorate
Solution Approach 1:
The deposition process is segmented into multiple distinct stages: initial deposition phase, intermediate plasma treatment phase, and final deposition phase. Each stage uses different plasma power levels and reactant conditions to address specific film quality issues at different locations on high aspect-ratio features, thereby resolving the uniformity problem while maintaining overall productivity
Solution Approach 2:
The patent dynamically changes plasma power parameters throughout the deposition process. High plasma power is used initially for rapid deposition, then reduced during intermediate treatment to modify surface properties, and adjusted again in final deposition. This parameter modulation enables control over both deposition rate and film quality uniformity across different feature locations
2Manufacturing precision
If intermediate plasma treatment with hydrogen and nitrogen reactants is performed, then film quality uniformity and gap fill properties are improved, but process complexity increases
Solution Approach 1:
The patent implements periodic action by cycling through different reactant gases (hydrogen, nitrogen) and plasma power levels in a structured sequence. The intermediate plasma treatment alternates between hydrogen-rich and nitrogen-rich phases, creating periodic chemical environments that systematically improve film uniformity without requiring continuous complex adjustments
Solution Approach 2:
Hydrogen and nitrogen gases serve as intermediary substances during the deposition process. Hydrogen plasma acts as an intermediate treatment to modify surface properties and reduce etch rate variations, while nitrogen plasma provides additional nitridation. These intermediaries enable control over film properties without directly adding complexity to the final product structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves reduced film quality variation and enhanced gap fill capabilities, resulting in silicon nitride layers with consistent wet etch rates and superior uniformity, particularly on high aspect-ratio features.
Implementation Method 1
plasma-enhanced atomic layer deposition (PEALD) can be used to deposit silicon nitride
Implementation Method 2
providing a deposition plasma power to form a plasma within the reaction chamber
Data Source
AI summary
Methods of depositing silicon nitride on a surface of a substrate are disclosed. The methods include using an intermediate treatment process to increase a quality of the silicon nitride layer and a second treatment process.