C-Shaped Nanosheet Channel for High Integration Density
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Solution Overview
Problem
Current semiconductor devices, such as FinFETs and MBCFETs, face limitations in increasing integration density and enhancing performance due to device structure constraints, and struggle with controlling the thickness or diameter of nanosheets or nanowires in vertical MOSFETs during processes like photolithography and etching.
Innovation Solution
A semiconductor device with a C-shaped nanosheet or nanowire channel is developed, featuring a channel portion with two or more curved nanosheets or nanowires spaced apart on a substrate, each with a C-shaped cross-section, and a gate stack surrounding the channel portion, manufactured using a method involving epitaxial growth and selective etching to control channel thickness and gate length.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional device structures like FinFET or MBCFET are used, then manufacturing is relatively simple, but integration density and device performance cannot be increased further
Solution Approach 1:
The patent transitions from planar 2D channel structures to three-dimensional C-shaped nanosheet/nanowire structures. The channel portion wraps around the gate stack in a C-shape configuration, utilizing vertical and lateral dimensions simultaneously to increase the effective channel area without proportionally increasing the footprint area, thereby achieving higher integration density.
Solution Approach 2:
The channel portion is nested around the gate stack, with the C-shaped nanosheet/nanowire wrapping partially around the gate structure. This nested configuration allows the channel to maximize its contact with the gate while maintaining a compact overall structure, enabling higher device performance and density.
2Manufacturing precision
If photolithography and etching processes are used for vertical nanosheet or nanowire devices, then device fabrication is achieved, but the thickness or diameter of nanosheets or nanowires is difficult to control due to process fluctuations
Solution Approach 1:
The channel layer is formed through epitaxial growth on the sidewall of the mandrel structure before the gate stack is completely formed. This preliminary formation of the channel layer on a pre-defined mandrel sidewall provides a template that ensures precise thickness control, as the epitaxial growth process is more controllable than photolithography and etching for achieving uniform thin films.
Solution Approach 2:
A mandrel structure is introduced as an intermediary element to define the channel geometry. The mandrel serves as a temporary structure that guides the epitaxial growth of the channel layer, ensuring uniform thickness. After the channel is formed, the mandrel is removed, leaving the precisely controlled C-shaped channel structure.
3Power
If more channel structures are added to increase current driving capability, then device performance improves, but device area increases reducing integration density
Solution Approach 1:
The C-shaped channel configuration utilizes vertical stacking and lateral wrapping to increase the effective channel width without proportionally increasing the device footprint. Multiple channel portions are stacked vertically and arranged in a compact C-shape around the gate, enabling higher current driving capability while maintaining small area occupancy for high integration density.
Solution Approach 2:
Multiple channel portions are merged into a single integrated C-shaped structure that wraps around the gate stack. This merging of multiple channels into one unified configuration allows them to share common source/drain regions and gate control, increasing current capability while minimizing the area required compared to separate channel structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The C-shaped nanosheet or nanowire channel structure enhances current driving capability and allows for precise control of channel size and gate length, leading to improved performance and higher integration density in semiconductor devices.
Implementation Method 1
forming a channel layer on the sidewall of the mandrel structure; wherein the channel layer is formed through epitaxial growth
Data Source
AI summary
The present disclosure discloses a semiconductor device with C-shaped channel portion, a method of manufacturing the same, and an electronic apparatus including the same. According to the embodiments, the semiconductor device may comprise a channel portion on a substrate, the channel portion including two or more curved nanosheets or nanowires spaced apart from each other in a lateral direction relative to the substrate and each having a C-shaped cross section; source/drain portions respectively located at upper and lower ends of the channel portion relative to the substrate; and a gate stack surrounding an outer circumference of each nanosheet or nanowire in the channel portion.