Alternating Cache Latch Output for Memory Sensing Margin
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Solution Overview
Problem
Existing memory devices face challenges in optimizing the precharge operation on bit output lines, which affects the sensing margin and efficiency of data output operations.
Innovation Solution
The memory device employs a cache latch arrangement with alternating odd and even cache latches coupled to separate bit output lines, using a sense amplifier to alternately sense and amplify voltage differences, and precharge circuits to extend the precharge time on these lines, improving sensing margins.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the bit output lines are developed for a longer period to increase voltage difference, then the sensing margin is improved, but the data output time is extended
Solution Approach 1:
The cache latch group is divided into odd and even cache latches that are sequentially arranged and alternately coupled to the sense amplifier through bit output line groups. This segmentation allows independent development and sensing operations on different line groups, enabling overlapping operations that reduce total data output time while maintaining adequate sensing margins.
Solution Approach 2:
The bit output lines are precharged to a predetermined voltage level before data output operations begin. This preliminary action ensures that the lines are ready for immediate development when column selection signals are activated, eliminating setup delays and enabling faster transition to the development phase, thus reducing overall data output time without compromising sensing quality.
2Reliability
If the precharge operation is extended to improve sensing margin, then the reliability of data output is improved, but the operational efficiency decreases
Solution Approach 1:
The sense amplifier alternately couples to first and second bit output line groups in periodic fashion, with each group undergoing development, sensing, and precharge cycles. This periodic operation allows one line group to be precharged while another is being sensed, maintaining continuous productive operation and improving overall efficiency without sacrificing the precharge duration needed for reliable sensing.
Solution Approach 2:
While one bit output line group is undergoing sensing operation, the other bit output line group is simultaneously being precharged. This continuous overlapping of operations ensures that the sense amplifier is always engaged in a useful operation, eliminating idle time and maintaining high productivity while ensuring each sensing operation has adequate precharge time for reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the precharge operation duration and improves the sensing margin, thereby increasing the efficiency and reliability of data output in memory devices.
Implementation Method 1
a sense amplifier configured to be alternately coupled to the first bit output line group and the second bit output line group and configured to output data, obtained by sensing and amplifying a voltage difference of the coupled first bit output line group or the coupled second bit output line group
Implementation Method 2
a first precharge circuit configured to precharge the first bit output line group while the sense amplifier is coupled to the second bit output line group; and a second precharge circuit configured to precharge the second bit output line group while the sense amplifier is coupled to the first bit output line group
Data Source
AI summary
A memory device for outputting data, and a method of operating the same, includes a cache latch group including a plurality of cache latches that are sequentially arranged, wherein a plurality of odd cache latches and a plurality of even cache latches that are included in the plurality of cache latches are alternately arranged. The memory device also includes a sense amplifier configured to be coupled to the plurality of odd cache latches through a first bit output line group and coupled to the plurality of even cache latches through a second bit output line group, alternately. The memory device additionally includes a bit output line selection circuit configured to alternately couple the sense amplifier to the first bit output line group and the second bit output line group in response to a bit output line selection signal.