Capacitive Isolation Device Trenches Breakdown Voltage
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Solution Overview
Problem
Capacitive isolators face challenges in achieving high voltage tolerance due to limitations in conventional semiconductor processes, resulting in breakdown voltage issues and susceptibility to noise, especially when incorporating high voltage capacitors on semiconductor dies.
Innovation Solution
The implementation of an isolation device with a substrate, metal layers, isolation material, and trenches to enhance electrical isolation, where the isolation material includes an enhanced isolation layer and trenches that intercept residue materials to prevent breakdown paths, thereby increasing the breakdown voltage and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high voltage capacitors are incorporated into semiconductor die using conventional semiconductor process, then voltage isolation capability is improved, but breakdown voltage is insufficient and manufacturing reliability deteriorates
Solution Approach 1:
The patent combines conventional semiconductor process capacitor structures with specialized high-voltage isolation techniques, creating a composite isolation structure that achieves both manufacturability and high breakdown voltage. The isolation structure integrates multiple materials and process steps to overcome the limitations of single-approach solutions.
Solution Approach 2:
The patent transitions from planar capacitor layouts to three-dimensional isolation structures, utilizing vertical dimension and layered architectures to achieve higher breakdown voltages. By stacking isolation layers and creating depth in the isolation structure, the solution overcomes the two-dimensional limitations of conventional processes.
2Reliability
If capacitors are arranged in series to meet breakdown voltage specification, then voltage tolerance is improved, but floating electrical nodes increase susceptibility to noise and reduce testability
Solution Approach 1:
The patent extracts the problematic floating nodes from the series capacitor configuration by providing dedicated connection paths to reference potentials. By removing these isolated floating nodes and connecting them to defined voltage references, the solution eliminates the noise susceptibility while maintaining the high breakdown voltage benefits of series arrangement.
Solution Approach 2:
The patent introduces intermediary connection structures and shielding elements that mediate between the series capacitor nodes and the external environment. These intermediaries provide controlled impedance paths and electromagnetic shielding that reduce noise coupling while preserving the electrical isolation function.
3Reliability
If opto-isolators are used to achieve high breakdown voltage, then voltage isolation is improved, but optical signal degradation occurs over time
Solution Approach 1:
The patent replaces the optical transmission mechanism with direct electrical field coupling through capacitive structures. By substituting the optical path with an electrical field-based isolation mechanism, the solution achieves comparable voltage isolation without the degradation issues inherent in optical components over time.
Solution Approach 2:
The patent changes the fundamental operating parameters from optical frequency domains to electrical frequency domains. By operating in the electrical domain with carefully controlled capacitance values and field strengths, the solution achieves stable long-term performance while maintaining high breakdown voltage capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively enhances the breakdown voltage and reliability of capacitive isolators by interrupting unwanted electrical paths and improving high voltage tolerance, allowing for reliable communication between electrically isolated circuits operating at different voltage ranges.
Implementation Method 1
The isolation device may comprise a first plate, a second plate, and an isolation material. The isolation material may include an enhanced isolation layer and trenches that intercept residue materials that may exist between the first plate and the second plate
Implementation Method 2
The first circuit may be electrically isolated from the second circuit. The first signal may be transmitted from the first circuit to the second circuit as an electrical flux
Data Source
AI summary
An isolation device for isolating a first signal of a first circuit from a second circuit disclosed. The isolation device may have a substrate and a plurality of metal layers disposed on the substrate. The isolation device comprises a first plate that is electrically coupled to the first circuit, and a second plate that is electrically coupled to the second circuit. The first plate is configured to transmit the first signal from to a second plate that is electrically isolated from the first plate. The first plate and the second plate is surrounded by an isolation material. The isolation device further comprises at least one trench that extend at least partially through the isolation material in a direction that is substantially perpendicular to the first plate and the second plate. The at least one trench may circumscribe one of the first plate and the second plate.