Semiconductor/Solid-State Device Details TRIZ Cases

Varying resin insulation layer thickness compensates for thermal expansion differences, reducing warping and surface undulations to improve mounting yield.

Molding underfill reinforces semiconductor packages by distributing stress across electrical connections, reducing failure risks from thermal fluctuations.

Vertical electrode alignment in stack capacitors reduces fabrication steps, preventing capacitance deterioration from misaligned interfaces.

Resin film mounting simplifies packaging while maintaining connection reliability despite narrow terminal pitch.

A fan-out semiconductor package uses a metal post and via conductor to connect redistribution layers across stacked chips.

Wire bonding connects IGBT and diode substrates directly to control units, removing printed circuit boards to lower manufacturing costs.

Carboxylic acid gas reduces oxide films on solder bumps before melting, preventing resistance increases and connection failures in semiconductor devices.

Forming an internal modified layer inside the workpiece enables precise division along the weakened region, reducing material loss from slicing and grinding.

Three-section organic interposer replaces costly silicon with via stacks, resolving thermal mismatch and signaling degradation in integrated circuit packages.

A multilayer redistribution circuit structure uses controlled grain sizes in conductive layers to enhance electrical connectivity and mechanical integrity.

Segmented conductor planes in an IC package mitigate hot spots by lengthening current paths and reducing via stress.

A mesh grid protection system detects physical breaches by monitoring signal polarity toggles on conductive lines.

Pedestals mitigate compression and thermal stresses on low-k materials to maintain device isolation.

Vertical conductive lines outside chip projections reduce package volume, while fluid in hollow channels dissipates heat to resolve density constraints.

Uniformly disposed bumps on a semiconductor substrate resolve manufacturing complexity by using a single mask pattern for both real and dummy bump placement.

Differential solder wettability in a semiconductor metal film controls expansion shape while minimizing lift-off area to maintain productivity.

A distributed contact plug structure segments the high voltage path to distribute current flow across multiple regions.

An unfilled concave portion in the sealing resin creates a cavity that reduces stress on internal components and prevents discharge.

Columnar topographies on a semiconductor die bottom surface provide pathways for trapped gases to escape during glass frit firing.

A single-layered semiconductor package embeds a wiring layer in an insulative substrate to connect components and solder balls.

Thermal vias conduct heat from the active layer through the substrate to a dissipating component, managing temperature in high-density packages.

Integrating a graphite sheet with bent fins onto a resin main body increases dissipation surface area while reducing manufacturing steps and device cost.

Vertical stacking separates ground and non-ground electrical paths, reducing solder ball count for grounding while improving package form factor.

Reflow surface tension aligns dice on carrier platforms, eliminating alignment errors and defective fractions caused by low-accuracy equipment.

Corner press-fit anchors eliminate screw fastening to prevent mechanical stress and warpage during module installation.

Folded flexible sheets dissipate heat from integrated circuit chips, resolving the trade-off between thermal performance and device complexity.

Thermally-conductive alumina particles in a cyclo-aliphatic pre-dip material reduce photon density and extend device life.

Asymmetric electrode distribution reduces package size and wiring complexity, accommodating large displays without screen holes.

A semiconductor encapsulation resin uses low-valent titanium oxide to achieve deep blackness and recognizable laser markings.

Limiting photolithography to metal layers prevents wafer thinning and defocusing near marking labels, ensuring accurate readability.

A counter-doped semiconductor structure optimizes charge distribution across junction termination extension regions to enhance high-voltage performance.

A semiconductor-metal alloy region guides the recessing of a refractory metal liner and conductor to establish precise via alignment geometry.

Interposer couples leadfingers to semiconductor pads via conductive traces, resolving signal integrity and packaging density trade-offs.

A protection layer covers gate electrodes and sidewall spacers, preventing interconnect plug overlap with gate terminals that causes circuit shorts.

Raised contacts allow polished panel surfaces to eliminate topological irregularities and prevent electrical shorts in redistributed chip packages.

A silicon nitride layer blocks hydrogen diffusion within a three-dimensional memory contact via structure.

A power device package vertically stacks substrates to mount separate semiconductor chips, reducing planar footprint.

A ceramic liner shields copper pads from thermal damage during laser skiving, expanding the process window and improving cavity formation yield.

Pillar bumps expose top surfaces for direct electrical connections, eliminating laser via holes that damage chip electrodes.

Patterned plating seed layer creates cooling channels and plates solder, eliminating complex lift-off processes required by traditional microchannel interfaces.

A substrate uses a pointed structure and ESD protection material to rapidly release discharge current.

A dummy structure adjacent to conductive traces balances electroplating deposition rates, reducing thickness gaps between lands and traces below ten percent.

Segmented core material patterns create wider pads alongside fine wires, resolving lithography resolution limits without adding process complexity.

Segmented parallel resistive lines under capacitive units eliminate rounded corner issues, ensuring uniform performance.

Dynamic electric charge discharging circuit interrupts high negative voltage connection during testing to prevent latch-up and overcurrent interference.

Trenches in the isolation material intercept residue materials to prevent breakdown paths, increasing voltage tolerance and reliability.

Expanded metal in heat exchanger channels creates local turbulent flow acceleration, improving heat transfer efficiency without complex constructions.

Tensile stress from cobalt contact plugs reduces potential difference across gate dielectrics, improving NBTI performance and device lifetime.

Segmenting the substrate into independent zones with tailored solder masks prevents warping and uneven surfaces that cause inconsistent presolder printing.

Segmented heat sinks surround the receiver to maintain condensation regardless of tilt, resolving insufficient cooling in horizontal positions.

A lateral semiconductor device uses a space-charge generating layer to deplete the channel and control electric fields.

A segmented lower contact plug with a capping metal pattern reduces surface roughness on the magnetic tunnel junction bottom electrode.

A semiconductor component structure reduces parasitic capacitance through trench fabrication and selective layer deposition.

A semiconductor leadframe terminal features a stepped surface design that increases contact area with encapsulation resin to improve mechanical adhesion.

Deforming a bond wire ball into a shielding layer aperture seals the bond pad, preventing chloride ion corrosion of the alloy interface.

Segmented bus tabs extending from opposite die case sides increase current handling and heat dissipation without thick PWB copper layers.

Segmenting the connection system allows replacing rejected image sensor packages without discarding the flexible printed circuit board.

Strategic dummy patterns stabilize light intensity to prevent pattern shrinkage during defocusing.

Silver-diffused copper alloy interconnections prevent stress migration voids while maintaining low electrical resistance.

Silicon reacts with cobalt contacts to form a silicide barrier that prevents oxidation and migration during processing.

Placing an ID-indicating portion on a surface electrode increases visibility compared to the small ineffective region while maintaining low resistance.

Segmented connection wires with parallel branches prevent device failure when a single wire breaks.

Vertical stacking of a dedicated power delivery IC above the processor minimizes IR drops and ensures consistent voltage across multiple cores.

A patterned conductive layer electrically connects an LED chip to external circuits while providing a direct thermal path for heat dissipation.

Peripheral aluminum-ceramic fiber reinforcement reduces thermal stress and cracking in power-module base plates while maintaining high heat dissipation.

Dielectric via hole liners smooth rough sidewalls from laser drilling, reducing voids and improving plating reliability.

Forward diodes discharge in-process charges to ground during fabrication while reverse biasing prevents device disturbance.

A semiconductor package uses a pre-cured molding member with an internal cavity to mount devices and support circuit layers.

Local interconnection layers bridge active and groove isolation regions, reducing gate spacing without advanced reticle costs.

Solid-state sintering of a plated metal-diamond composite eliminates surface defects, enabling low-void Ni-based plating for high thermal conductivity.

Anisotropic conductive film bonds LED chips to a transparent carrier for simultaneous processing.

Three-part terminal structures enable vertical extension and thermal conduction paths, resolving the trade-off between device height and mounting reliability.

Spacer prevents leakage current between microchips, eliminating costly split paddle designs and ensuring reliable operation.

Metal-filled vias overlap gate fingers to conduct heat, resolving the trade-off between chip size and thermal management.

A stress-engineered film biases a released portion away from an integrated circuit surface to form flexible micro-spring contacts.

Segmented oxide layers with a crack-arresting film inhibit uniform crack propagation to prevent delamination in wafer-to-wafer bonding.

Segmented dummy wirings manage film forming speed and impurity distribution near plug parts, preventing void formation in copper wiring films.

A vertical epitaxial shell creates an elbow contact that increases surface area, reducing resistance by 2.5 to 20Ω-μm as device density rises.

A sensor device integrates a 3D NAND memory cell array with an integrated circuit layer on a first wafer structure bonded to a sensing module.

Conductive bumps integrate liquid cooling paths between stacked semiconductor dies, reducing junction-to-liquid thermal resistance at die interfaces.

A Cu-Mn alloy sputtering target forms a manganese oxide barrier layer during deposition.

A method for manufacturing inductor cores by forming conductors on a magnetic plate and dicing the substrate to create multiple units.

A semiconductor chip positions its power supply input pad on the output side edge to reduce surface area usage by the conductive line.

A dual metal gate electrode uses wet etching to expose sidewalls for selective deposition of a larger grain layer.

Segmented fixing pieces on a metal heat slug constrain chip shift during placement, ensuring packaging precision without adding complex manufacturing steps.

Flexible conductors connect stacked semiconductor packages while absorbing thermal expansion stress.

Relieving internal stress via pre-transfer heating prevents unintended breaking during grinding, maintaining device integrity and production efficiency.

Mounting a relay within a substrate opening reduces profile height while maintaining electrical connectivity.

Segmented feedforward and feedback controllers correct alignment errors to resolve stalling and overshoot in nanoimprint lithography.

Ring-shaped protrusions form an airtight space around the photo-sensitive area, preventing particle contamination during packaging.

Lateral heat pipes divert HBM thermal energy to a secondary sink, reducing peak temperature by 4°C without increasing assembly footprint.

Redistribution lines in pad layers reduce metal layer count for 3D memory integration.

Redundant bonding-conductor structures establish reliable electrical connections between stacked semiconductor chips in three-dimensional integrated circuits.

A protective sleeve guides fasteners through via holes to prevent insulation sheet damage during assembly.

Pad-less pillars extend through insulative layers to contact dies directly, removing intermediate pads from the interconnect stack.

Reflowing conductive filler into tapered substrate vias creates protrusions that increase interconnect surface area.

Replacing low-k dielectric between metal lines with high-k material increases capacitance while preserving interlayer insulation integrity.

A segmented conductive contact overlaps only a portion of the metallic source/drain layer to minimize parasitic effects.

A ruthenium wiring method deposits a first film via chemical vapor deposition, then forms an additional layer at a higher rate before chemical mechanical polishing.

Direct coil conductor connections to external electrodes enhance inductance measurement changes for accurate short circuit detection.

A highly thermally conductive interlayer extracts heat from integrated circuit inductors, resolving temperature limits that restrict power delivery capability.

Recessed raised source drain structures increase silicide contact surface area to lower electrical resistance in CMOS transistors.

An isolation layer with a through hole exposes the pad, allowing a metal interlayer to absorb thermal stress and prevent damage to the insulating film.

A multi-chip integrated circuit design uses recessed regions to expose lower interlayer insulating layers and guide dicing saws through weakened zones.

Wafer level clip array connects top electrodes to down set bars inside grooves, reducing encapsulation size and manufacturing cost.

Conductive through substrate vias couple the source electrode to the rear surface, reducing wafer bowing and improving thermal performance.

Tapered spacer structure prevents electrical shorts by managing excess solder volume during copper pillar bonding.

Vertical stacked capacitor structure reduces chip area while maintaining high withstand voltage, enabling compact power module integration.

Tungsten contacts replace copper in e-fuses to solve reliability issues from thermal budget limitations.

A thermal interface pad wets liquid metal TIM, eliminating manual oxide scrubbing and maintaining thin bond-line thickness.

Selective oxidation of an oxidizable material on exposed gate structures creates a protective oxide layer for self-aligned contacts.

Placing a sacrificial plug at the via bottom prevents metal smearing and electrical shorts during backgrinding.

Segmenting antennas across multiple chips overcomes single-chip area limits to boost image resolution.

Dynamic bridge pattern spacing in the seal ring area resolves manufacturing precision versus adaptability contradictions, preventing cracks during dicing.

A hybrid integrated circuit module mounts discrete InP FETs on a GaAs carrier to achieve high performance.

A primer layer bridges sealing resin and conductive films to block electromagnetic waves while improving mounting density.

Multi-tiered metal spacers replace non-rigid epoxy to ensure uniform die spacing and parallelism without requiring additional fabrication equipment.

Segmented via etching and border formation eliminate voids and corrosion during dual-damascene fabrication of super thick copper wires.

Segmented wafer-on-wafer stacks replace faulty dies without discarding entire wafers, resolving yield losses from large die variability.

An isolation element segments electric paths to reduce signal distortion caused by capacitive coupling between busy and idle circuits.

Interdigitated conductive clips bonded to power electrodes reduce spreading resistance in small semiconductor devices without traditional housing.

Equalized wiring lengths between parallel I/O cells prevent signal delays and enhance reliability.

Segmented DQ pad groups reduce wiring length and density, improving signal quality in multi-bit semiconductor devices.

A magnetic structure increases characteristic impedance of transmission lines in semiconductor packages.

A semiconductor package uses a conductive via in an adhesive layer to connect the die.

A multilayer film wafer mold material with a high-filler first layer and low-filler second layer prevents warp in large-diameter thin-film wafers.

A semiconductor package uses conductive vias and encapsulants to mount dies on opposite substrate surfaces for efficient electrical connection.

Nested packaging with an inner heat shield dissipates thermal loads and blocks electromagnetic interference without increasing horizontal footprint.

A stacked-die package design nests a die in a substrate opening to reduce overall thickness while maintaining area efficiency.

Direct bond hybridization seals fluid channels within semiconductor wafers, eliminating stress concentration at bonding interfaces.

A 3D semiconductor device uses optical annealing to repair crystal lattice defects while protecting underlying metal interconnect layers from thermal damage.

A three-dimensional memory device uses self-aligned lateral contact elements to connect conductive layers through a retro-stepped dielectric material portion.

Grounding floating metallic rings via vias and exterior plating suppresses unwanted RF coupling, stabilizing semiconductor dies across broader frequency ranges.

Intermediate circuit layers with conductive vias electrically connect stacked modules, preventing short-circuits during heating.

A three-dimensional memory device uses iterative layer patterning to form stepped terrace regions for horizontal and vertical word line integration.

A vehicle transmission circuit device uses a heat conducting surface on the integrated circuit opposite side to dissipate thermal energy.

Strategic bonding portion placement isolates internal spaces in stacked semiconductor components, preventing moisture ingress and suppressing corrosion.

A semiconductor device uses copper and gold bonding wires with different Young's moduli to manage stress at electrode pads.

Integrating a bypass capacitor within the QFP package reduces supply path inductance and resistance, eliminating voltage drops caused by external components.

Segmented fastener with elastic projections mounts heat sinks securely, eliminating fin cutting to preserve full dissipation area.

Sandwiching a leadframe between mold dies with matrix-state cavities enables efficient resin sealing without runner portions on the substrate.

A nested alignment accuracy mark structure integrates multiple pattern sets to verify multi-step lithographic registration.

Embedding chips in a PCB reduces stray inductance below 10 nH for fast switching wide band-gap semiconductors.

Peripheral molding compound protrusions increase semi-finished package rigidity to overcome warpage from thermal expansion mismatch.

Injection molding creates uniform solder balls, eliminating voids and stress concentration in 3D packaging.

Differentiated resin regions correct substrate warpage and reduce stress on joining portions during temperature cycling.

Edge-mounted circuit routing connects multiple light emitting diode devices on a single layer, reducing device thickness and manufacturing complexity.

Imaging an initial alignment structure into a growing epitaxial layer simplifies lithography complexity by merging alignment and device pattern formation.