Wiring Structure Dummy Structure Plating Uniformity
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Solution Overview
Problem
The miniaturization of semiconductor devices faces challenges in achieving uniform plating of fine line wiring structures, leading to thickness gaps between conductive lands and traces, which can result in stress, cracking, and electrical issues due to uneven deposition rates during the plating process.
Innovation Solution
Incorporating a dummy structure adjacent to the conductive trace, with a specific area ratio to the conductive land, to ensure uniform plating and reduce thickness differences, thereby improving plating uniformity and meeting industrial standards.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the width of conductive land is much greater than the width of conductive trace, then the conductive land can accommodate higher current and provide better electrical connection, but the deposition rate of metal ions on conductive lands becomes higher than on conductive traces during plating, resulting in thickness gap and potential cracking
Solution Approach 1:
A dummy structure is introduced as an intermediary element between the conductive land and conductive trace. This dummy structure acts as a mediator that absorbs excess plating material during the electroplating process, preventing the thickness gap that would otherwise form between the large conductive land and narrow conductive trace. The dummy structure is strategically positioned to balance the plating deposition across different areas.
Solution Approach 2:
The invention changes the geometric parameters of the wiring structure by adding a dummy structure with specific dimensions and positioning. By adjusting the size, shape, and location of the dummy structure, the overall plating uniformity is optimized. The dummy structure's parameters are designed to compensate for the area difference between conductive land and trace, ensuring uniform metal ion deposition throughout the plating process.
2Reliability
If a relatively thicker dielectric layer or passivation layer is used to cover the wiring structure, then the conductive lands are fully covered and electrical leakage is prevented, but the entire wiring structure becomes thicker and may not meet thickness specifications
Solution Approach 1:
The dummy structure is added during the plating process before the dielectric layer is deposited. This preliminary action ensures that the conductive lands and traces have uniform thickness from the outset, eliminating the need for excessive dielectric layer thickness to compensate for plating non-uniformity. By addressing the thickness variation early in the manufacturing process, the final structure thickness can be controlled within specifications.
3Productivity
If fine line design is implemented to miniaturize semiconductor devices, then device performance is improved and manufacturing cost is reduced, but plating uniformity becomes difficult to control and thickness gaps form between conductive elements
Solution Approach 1:
The dummy structure is strategically placed in specific locations where plating uniformity needs to be improved. Rather than uniformly increasing all conductive element dimensions, the dummy structure locally compensates for areas where excessive plating deposition would occur. This localized approach maintains the fine line design benefits while correcting plating non-uniformity in critical areas.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves improved plating uniformity, reducing stress and electrical problems by maintaining a thickness difference of less than 10% between conductive lands and traces, ensuring the wiring structure meets specifications and maintains structural integrity.
Implementation Method 1
plating of the wiring structure is completed... during a plating process, a rate of deposition of metal ions of a plating solution on conductive lands will be higher than a rate of deposition of metal ions on conductive traces
Data Source
AI summary
The present disclosure relates to a wiring structure and a semiconductor package. The wiring structure comprises a first wiring pattern, a dielectric layer and a dummy structure. The first wiring pattern includes a conductive land having a width W1 and a surface area A, and a conductive trace having a width W2 and electrically connected to the conductive land, wherein ((W1*W2)/A)*100%≤ about 25%. The dielectric layer covers the first wiring pattern, and the dummy structure is adjacent to the conductive trace.