Semiconductor Resin Configuration for Warpage Control

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Solution Overview

Problem

Existing semiconductor devices with flip-chip bonding face challenges in minimizing substrate warpage and reducing stress on joining portions due to differences in thermal expansion coefficients between resins used inside and outside the outermost circumferential bumps, leading to poorer mounting properties and reliability.

Innovation Solution

A semiconductor device design where a first resin with a lower thermal expansion coefficient is used inside and outside the formation region of bumps, and a second resin with a higher thermal expansion coefficient is used outside the first resin, ensuring both resins have a higher expansion coefficient than the substrate, thereby reducing warpage and stress on joining portions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If different resins with different thermal expansion coefficients are used inside and outside the outermost circumferential bumps, then the moisture blocking effect is improved, but the substrate warpage increases and stress on joining portions increases

Engineering Contradiction:
Improvemoisture resistanceVSAvoidsubstrate flatness
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent applies different resin formulations in different regions: the first resin with higher inorganic filler content (30-70 wt%) is used inside the outermost circumferential bumps for moisture blocking, while the second resin with lower inorganic filler content (0-30 wt%) is used outside the outermost circumferential bumps for substrate warpage correction. This local differentiation resolves the contradiction by optimizing each region for its specific function.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the thermal expansion coefficient parameter of the resin by adjusting the inorganic filler content. The first resin has a thermal expansion coefficient of 50-150 ppm/°C (higher filler content) for moisture resistance, while the second resin has a thermal expansion coefficient of 100-200 ppm/°C (lower filler content) for better thermal matching with the substrate, thereby correcting warpage and reducing stress.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If the thermal expansion coefficient of the resin is lowered to improve moisture resistance, then the moisture blocking effect is enhanced, but the stress on joining portions increases due to thermal expansion mismatch

Engineering Contradiction:
Improvemoisture resistanceVSAvoidstress on joining portions
Core Design Contradiction:
ReliabilityVSStress or pressure

Solution Approach 1:

The patent creates a local quality distinction where the first resin (inside bumps) has low thermal expansion coefficient for moisture blocking, while the second resin (outside bumps) has high thermal expansion coefficient for stress reduction. This spatial differentiation allows both contradictory requirements to be satisfied in their respective regions.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses composite resin materials with different inorganic filler compositions and ratios. The first resin contains inorganic filler at 30-70 wt% for moisture resistance, while the second resin contains inorganic filler at 0-30 wt% for thermal expansion matching, creating composite materials that optimize both moisture blocking and stress management.

Inventive Principle:
Principle #40Composite materials

3Reliability

If the inorganic filler content in the resin is increased to improve moisture resistance, then the moisture blocking effect is enhanced, but the substrate warpage increases due to thermal expansion mismatch

Engineering Contradiction:
Improvemoisture resistanceVSAvoidsubstrate warpage
Core Design Contradiction:
ReliabilityVSShape

Solution Approach 1:

The patent applies high inorganic filler content (30-70 wt%) locally inside the outermost circumferential bumps where moisture blocking is critical, and low inorganic filler content (0-30 wt%) outside the bumps where thermal expansion matching is more important for warpage control. This resolves the contradiction by optimizing filler distribution spatially.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the inorganic filler content parameter from 30-70 wt% in the first resin to 0-30 wt% in the second resin, thereby adjusting the thermal expansion coefficient to control substrate warpage while maintaining moisture resistance in the critical bump regions.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the warpage correcting effect of the substrate, improves the flatness, and increases the yield and reliability of semiconductor devices by uniformly distributing flux on BGA balls during mounting, preventing defective bonding.

Implementation Method 1

a first resin that is placed in a first region which is surrounded by outermost circumferential bumps, and is placed inside the outermost circumferential bumps, and a second resin that is placed outside the first resin, a modulus of elasticity of the first resin being higher than a modulus of elasticity of the second resin, a thermal expansion coefficient of the first resin being lower than a thermal expansion coefficient of the second resin

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS8710651B2Semiconductor device and method for manufacturing the same
Publication Date: 2014.04.29 RENESAS ELECTRONICS CORP
  • US8710651B2 patent drawing
  • US8710651B2 patent drawing
  • US8710651B2 patent drawing

AI summary

A semiconductor device includes a substrate, a semiconductor chip that is bonded to one of the faces of the substrate via bumps, and has a device formation face facing the one of the faces, and a resin that fills the space between the device formation face of the semiconductor chip and the one of the faces of the substrate. The resin includes: a first resin that is formed in a formation region of bumps placed on the outermost circumference of the bumps, and is formed inside the formation region, and a second resin that is formed outside the first resin. The thermal expansion coefficient of the substrate is higher than the thermal expansion coefficient of the first resin. The thermal expansion coefficient of the second resin is higher than the thermal expansion coefficient of the first resin.