GaN Transistor Through-Substrate Via Electrical Coupling
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Solution Overview
Problem
Current lateral transistor devices, such as gallium nitride-based High Electron Mobility Transistors (HEMTs), face challenges in achieving optimal connection between the source and the rear surface of the substrate, which affects the device's performance and efficiency.
Innovation Solution
A method involving the formation of a conductive through substrate via (TSV) by creating an opening in the front surface of the substrate and inserting conductive material to couple the source electrode of the Group III nitride-based transistor to the rear surface, enhancing the electrical connection and structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conductive through substrate via is formed to couple the source electrode to the rear surface, then electrical coupling and thermal performance are improved, but device complexity and manufacturing complexity increase
Solution Approach 1:
The connection path is segmented into two parts: a first conductive layer formed on the front surface coupling to the source electrode, and a second conductive layer formed on the rear surface. These segments are separately formed and then connected through the substrate, allowing independent optimization of each connection point while achieving overall improved electrical and thermal coupling.
Solution Approach 2:
The connection is extended from a single-plane connection to a three-dimensional through-substrate connection. By forming conductive paths that traverse the substrate thickness dimension, the invention creates vertical electrical and thermal conduction paths that complement the lateral connections, thereby improving overall coupling performance without compromising device functionality.
2Temperature
If a conductive through substrate via is formed to couple the source electrode to the rear surface, then thermal performance is improved, but manufacturing complexity increases
Solution Approach 1:
The first conductive layer is formed on the front surface and connected to the source electrode before the substrate is thinned or processed on the rear surface. This preliminary formation of the front-side conductive structure allows subsequent rear-side processing to focus solely on creating the second conductive layer and establishing through-substrate connections, thereby managing manufacturing complexity through staged processing.
Solution Approach 2:
The substrate itself acts as an intermediary medium that houses the through-conductive path. By utilizing the substrate structure as the carrier for the vertical connection, the invention eliminates the need for separate complex interconnection structures, thereby improving thermal performance while keeping manufacturing relatively straightforward.
3Stability of the object's composition
If a conductive through substrate via is formed, then wafer bowing is reduced, but device complexity increases
Solution Approach 1:
The conductive layers are formed in specific localized regions rather than uniformly across the entire substrate. The first conductive layer is positioned to couple with the source electrode, and the second conductive layer is positioned on the rear surface at corresponding locations. This localized formation allows the through-conductive structures to provide mechanical anchoring points that reduce wafer bowing without requiring complex full-substrate modifications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the electrical coupling and thermal performance of the transistor devices, reducing wafer bowing and facilitating better handling and processing, while maintaining low conduction loss and high blocking voltage capabilities.
Implementation Method 1
inserting conductive material into the opening, and coupling a source electrode of the Group III nitride-based transistor to a rear surface of the substrate with the conductive material
Implementation Method 2
This approach improves the electrical coupling and thermal performance of the transistor devices
Data Source
AI summary
In an embodiment, a method includes forming an opening in a front surface of a substrate including at least one Group III nitride-based transistor on the first surface, inserting conductive material into the opening, and coupling a source electrode of the Group III nitride-based transistor to a rear surface of the substrate with the conductive material.