Recessed Insulating Regions for Crack-Resistant Semiconductor Dicing
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Solution Overview
Problem
Existing semiconductor chip dicing processes often result in instability and reliability issues due to cracking, which current technologies fail to adequately prevent.
Innovation Solution
A multi-chip integrated substrate design featuring recessed regions in the edge area, including a first recessed region that exposes the upper surface of the lower interlayer insulating layer and side surfaces of the lower insulating layers, and a second recessed region extending over the first recessed region, along with a structurally-weakened region aligned to the cutting area, such as a laser-irradiated region, to enhance mechanical dicing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a standard dicing process is used on semiconductor chips with multi-layer insulating structures, then the dicing process is simple and fast, but cracks occur in the insulating layers leading to chip failure
Solution Approach 1:
The insulating structure is divided into multiple layers (lower interlayer insulating layer, lower insulating layers, upper insulating layers) with recessed regions between them. This segmentation allows the dicing saw to cut through alternating layers, preventing continuous crack propagation while maintaining overall structural integrity.
Solution Approach 2:
Recessed regions are created at specific locations within the insulating structure, particularly at interfaces between layers. These localized modifications create alternating hard/soft zones that selectively guide and stop crack propagation paths during dicing, improving reliability without requiring complete structural redesign.
2Reliability
If the insulating structure is made more robust to prevent cracking, then chip reliability improves, but the dicing process becomes more difficult and yield decreases
Solution Approach 1:
The recessed regions are pre-formed within the insulating structure before the dicing process. This preliminary modification creates predetermined crack-stop zones that guide the dicing saw blade through safe paths, ensuring reliable cutting without requiring excessive force or special dicing conditions, thereby maintaining high yield.
3Reliability
If a laser-irradiated structurally-weakened region is added to the cutting area, then crack prevention during dicing is enhanced, but the manufacturing process becomes more complex
Solution Approach 1:
A laser-irradiated region is introduced to locally modify the mechanical properties of the insulating structure at the cutting area. The laser treatment creates a weakened zone with altered stress distribution that prevents crack initiation and propagation during mechanical dicing, replacing the need for purely mechanical crack prevention methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design effectively reduces or prevents crack generation during the dicing process by exposing the lower interlayer insulating layer and weakening the cutting region, thereby improving the stability and reliability of semiconductor chips.
Implementation Method 1
a structurally-weakened region, which is aligned to the cutting region. The structurally-weakened region may be a laser-irradiated region.
Data Source
AI summary
An integrated circuit device includes a semiconductor substrate having a first device region, a second device region, and a scribe line region therein. The scribe line region, which extends between the first and second device regions, includes a first edge region adjacent the first device region, a second edge region adjacent the second device region and a cutting region extending between the first and second device regions. A lower interlayer insulating layer is provided on the first and second device regions and on the scribe line region. A first multi-level guard ring is provided, which at least partially surrounds the first device region, when viewed from a plan perspective. An insulating structure is provided, which has a recess therein. The recess extends adjacent the first multi-level guard rings and exposes an upper surface of the lower interlayer insulating layer.