Power Semiconductor Package With Conductive Clip Bonding
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Solution Overview
Problem
The challenge lies in creating power semiconductor packages that can make small, low resistance connections to the latest generation of small-sized, high-power semiconductor devices, such as III-nitride based devices, which require external connection capabilities not feasible with conventional technologies due to their tiny size and high power capability.
Innovation Solution
A power semiconductor package is developed using a polysiloxane-based dielectric polymer passivation body and fine geometry clip bonding, where conductive clips with interdigitated fingers are electrically and mechanically coupled to the power electrodes, allowing for redistribution and external connection without the need for a traditional housing material, enabling surface mounting on circuit boards.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional housing materials (mold compound) are used to package small power semiconductor devices, then the devices can be protected and handled, but the connection resistance increases and external connection capability is lost due to the tiny size of the devices
Solution Approach 1:
The patent uses a thin film passivation body (dielectric polymer layer) instead of conventional thick mold compound housing. This thin film approach allows direct exposure of power electrodes for external connection while still providing necessary protection, eliminating the need for complex wire bonding and lead frame structures required by traditional packaging.
Solution Approach 2:
The invention extracts the essential protective function from the conventional housing material and implements it through a thin film passivation body. This extraction allows the power electrodes to be directly accessible for external connections, removing the intermediate connection structures (wire bonds, leads) that conventional packaging requires.
2Power
If the size of power semiconductor devices is reduced to increase power capability, then power density increases, but the ability to make low resistance connections and provide external connection capability deteriorates
Solution Approach 1:
The patent transitions from three-dimensional conventional packaging with lead frames and wire bonds to a two-dimensional surface-mountable structure. The power electrodes are directly exposed on the surface of the thin film passivation body, allowing direct connection to circuit board pads in the same plane, which is essential for miniaturized high-power devices.
Solution Approach 2:
The thin film dielectric polymer passivation body provides a flexible, thin protective layer that allows direct access to power electrodes for low-resistance connections while maintaining device protection. This thin film approach is scalable to very small device sizes while maintaining connection reliability.
3Reliability
If a thin film passivation body is used instead of conventional housing, then external connection capability is enabled and spreading resistance is reduced, but the protective function must be maintained without traditional housing
Solution Approach 1:
The thin film dielectric polymer passivation body serves as both the protective enclosure and the connection interface. This single structure provides environmental protection while enabling direct external connections to power electrodes, eliminating the need for separate housing and connection structures.
Solution Approach 2:
The passivation body performs multiple functions simultaneously: it protects the semiconductor die from environmental factors, provides mechanical support, enables external electrical connections through exposed power electrodes, and allows surface mounting on circuit boards. This multi-functionality resolves the contradiction between protection and connection capability.
Data Source
AI summary
A power semiconductor package that includes a semiconductor die having at least two power electrodes and a conductive clip electrically and mechanically coupled to each power electrode.