Lateral Semiconductor Device with Space-Charge Layer for High Voltage
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Solution Overview
Problem
Current high-voltage semiconductor devices face limitations in achieving breakdown voltages due to non-uniform electric fields, premature breakdown, and increased on-resistance, especially at voltages above 400 volts, which restricts their performance in kilovolt switching applications.
Innovation Solution
A lateral semiconductor device design incorporating a space-charge generating layer and a set of electrodes on the opposite side of the device channel, which forms a space-charge region to deplete the channel, allowing for controlled electric field distribution and reduced surface and bulk electric field components, achieving a more uniform electric field and higher breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate-drain spacing is increased to achieve higher breakdown voltage, then the breakdown voltage improves, but the device area and complexity increase
Solution Approach 1:
The invention divides the gate-drain spacing into multiple segments by inserting field plates at intermediate positions. This segmentation allows the electric field to be distributed more uniformly across the gate-drain region, achieving high breakdown voltage without requiring a single large spacing distance, thus reducing overall device complexity while maintaining reliability.
Solution Approach 2:
Field plates are introduced as intermediary structures between the gate and drain electrodes. These field plates act as mediators that modify the electric field distribution, creating a more uniform field profile that enables higher breakdown voltage without increasing the total gate-drain spacing, thereby resolving the contradiction between reliability and device complexity.
2Reliability
If field plates are added to reduce peak electric field near the gate edge, then the breakdown voltage increases, but the device complexity and capacitance increase
Solution Approach 1:
The invention applies field plates with specific local characteristics (conductivity, positioning, dimensions) tailored to the local electric field requirements at different positions in the gate-drain spacing. This localized optimization reduces peak electric fields effectively while minimizing the overall number and complexity of field plate structures needed, thus improving breakdown voltage without excessive complexity increase.
3Reliability
If multiple field plates are used to achieve uniform electric field, then the breakdown voltage improves, but the manufacturing precision requirements increase
Solution Approach 1:
The invention uses a limited number of field plates with optimized dimensions and positions that provide sufficient electric field uniformity without requiring extremely precise manufacturing tolerances. By selecting an appropriate number of field plates (neither too few nor too many) and optimizing their parameters, the design achieves acceptable field uniformity with realistic manufacturing precision capabilities, resolving the contradiction between reliability and manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances breakdown voltage and reduces on-resistance, enabling higher operating voltages and maximum power while maintaining a shorter gate-drain spacing, thus overcoming the limitations of prior art devices.
Implementation Method 1
The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel
Implementation Method 2
allowing for controlled electric field distribution and reduced surface and bulk electric field components, achieving a more uniform electric field and higher breakdown voltage
Data Source
AI summary
A lateral semiconductor device and/or design including a space-charge generating layer and a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.