Semiconductor Wire and Pad Formation via Segmented Core Patterns

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Solution Overview

Problem

The side wall transfer technique for forming fine wire patterns in semiconductor devices struggles to create pads wider than the wire, leading to reduced manufacturing reliability due to limitations in lithography resolution, particularly at connection points between wires and pads.

Innovation Solution

A method involving the formation of core material patterns with specific geometries and etching processes using side wall patterns as masks, allowing for the creation of pads wider than the wire without the need for a cover process, by exploiting differences in etching speeds based on pattern density.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the side wall transfer technique is used to form fine wire patterns, then the wire pattern resolution is improved, but the pad width cannot be made wider than the wire

Engineering Contradiction:

Improvewire pattern resolutionVSAvoidpad width flexibility

Core Design Contradiction:

Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The core material pattern is segmented into different width portions: a first portion with width corresponding to the wire pattern and a second portion with width corresponding to the pad pattern. This segmentation allows the single core material pattern to serve dual purposes - defining both the fine wire pattern through side wall transfer and the wider pad pattern through selective removal.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different portions of the core material pattern have different local qualities (widths). The first portion has a narrower width for wire formation, while the second portion has a wider width for pad formation. This local variation in quality enables the technique to produce both fine wire patterns and wider pads from a single core material pattern.

Inventive Principle:

Principle #3Local quality

2Adaptability or versatility

If a cover process is added to form pads wider than the wire, then the pad width flexibility is improved, but the manufacturing process complexity increases

Engineering Contradiction:

Improvepad width flexibilityVSAvoidmanufacturing process complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The wire pattern formation and pad pattern formation are merged into a single side wall transfer process. By designing the core material pattern with varying widths, both the fine wire pattern and the wider pad pattern are formed simultaneously in one etching process, eliminating the need for separate cover processes.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The core material pattern serves multiple functions: it acts as the basis for side wall transfer to form wires, and simultaneously provides the width definition for pads through its wider second portion. This multi-functionality eliminates the need for additional dedicated pad formation processes.

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Ease of manufacture

If the core material is removed uniformly, then the manufacturing simplicity is maintained, but the pad and wire connection reliability is reduced

Engineering Contradiction:

Improvemanufacturing simplicityVSAvoidpad and wire connection reliability

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The core material in the pad region is removed in advance before the side wall transfer etching process. This preliminary removal creates a wider opening in the pad area, ensuring reliable electrical connection between pads and wires while maintaining the simplicity of the overall manufacturing process.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach simplifies the manufacturing process, reduces costs, and enhances the reliability of semiconductor device production by enabling the formation of pads wider than the wire without precision issues, thus improving the overall manufacturing efficiency.

Implementation Method 1

etching speeds based on pattern density

Methodology Applied

Scientific EffectEtching:

Implementation Method 2

using side wall patterns as masks

Methodology Applied

Scientific EffectMasking:

Data Source

PatentUS9786556B2Semiconductor device and method of manufacturing the semiconductor device

Publication Date: 2017.10.10 KIOXIA CORP

AI summary

According to an embodiment, a manufacturing method of a semiconductor device includes forming, on a film to be processed, a plurality of first core material patterns and a plurality of second core material patterns. Each of the second core material patterns is drawn from an end portion of the corresponding first core material pattern. The manufacturing method includes forming an opening pattern having one or a plurality of openings in the second core material pattern so that a first distance and a second distance are less than a predetermined distance. The first distance is a distance between an edge of the second core material pattern at a side of an adjacent first core material pattern and the opening pattern. The second distance is a distance between an edge of the second core material pattern at a side of an adjacent second core material pattern and the opening pattern.