Stacked Capacitor Structure for High-Voltage Snubber Miniaturization

The patent transitions from a planar trench capacitor design to a three-dimensional stacked capacitor structure. Multiple capacitor elements are arranged vertically in layers, with first and second capacitive elements stacked on top of each other. This vertical stacking approach converts the problem from a two-dimensional area constraint to a three-dimensional volume utilization, achieving high capacitance and withstanding voltage without requiring large chip area.

The patent divides the single large capacitor into multiple smaller capacitor elements (first capacitive element and second capacitive element) that are segmented and arranged in different layers. Each capacitor element has its own electrodes and dielectric layers, and they are connected through conductive structures. This segmentation allows the total capacitance to be achieved through parallel combination while reducing the area requirement for each individual element.

The patent employs vertical stacking of multiple capacitor layers to achieve the required capacitance value of 1 nF or more without increasing chip area. The first and second capacitive elements are arranged in different vertical layers, utilizing the third dimension (height) to increase effective capacitance while maintaining a compact footprint that is significantly smaller than traditional planar designs.

The patent combines multiple capacitor elements (first capacitive element and second capacitive element) into a single integrated stacked structure. The conductive layers and dielectric layers are merged across multiple levels, with shared electrodes and interconnections, creating a compact multi-layer capacitor assembly that achieves high capacitance in a small area.