Capacitive Semiconductor Heating for Localized Temperature Gradients
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing techniques for establishing or adjusting temperature gradients in semiconductor or thin-film substrates lack precise control and efficiency, often requiring conductive connections and relying on indirect heat transfer methods.
Innovation Solution
The use of a non-zero frequency time-varying electric field, capacitively coupled to the substrate through electrodes, allows for localized and controlled heat production by inducing oscillations in majority carriers, enabling multi-modal control of thermal energy gradients without the need for conductive connections or magnetic fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional cavity heating methods are used to heat semiconductor substrates, then bulk heating can be achieved, but precise localization of heat production and control of temperature gradients is lost
Solution Approach 1:
The patent applies local quality by making different regions of the semiconductor substrate have different electrical properties through selective doping. High-doped regions are created at specific locations where heat generation is desired, while other regions remain low-doped. This allows localized heat production when an electric field is applied, enabling precise temperature gradient control without bulk heating of the entire substrate.
Solution Approach 2:
The patent changes the electrical conductivity parameter of the semiconductor substrate by varying the doping concentration in different regions. By creating high-doped and low-doped regions with different carrier concentrations, the substrate's electrical properties are modified spatially, enabling selective heat generation in high-doped regions when voltage is applied, thus achieving localized thermal control.
2Use of energy by moving object
If conductive connections are used to deliver power to heating elements, then electrical power can be transmitted, but the complexity of the system increases and efficiency decreases
Solution Approach 1:
The patent makes the semiconductor substrate itself serve as the heating element by creating integrated high-doped regions within the substrate. These regions generate heat directly when voltage is applied across the substrate, eliminating the need for separate external heating elements and their associated conductive connections. The substrate performs both the function of being processed and generating heat where needed.
Solution Approach 2:
The patent merges the substrate with the heating function by integrating high-doped regions directly into the substrate structure. Instead of having separate heating elements connected via conductors, the heating capability is combined with the substrate itself through localized doping, simplifying the system architecture and improving power transmission efficiency.
3Power
If magnetic fields are used for heating applications, then induction heating can be achieved, but the system requires complex magnetic field generation equipment
Solution Approach 1:
The patent replaces magnetic field-based induction heating with direct electric field application. Instead of using complex magnetic field generation equipment for induction heating, the substrate is directly subjected to an electric field that causes charge carriers in the high-doped regions to move and generate heat through resistive heating, eliminating the need for magnetic field generation equipment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient and precise control of temperature gradients in semiconductor substrates, allowing for localized heat generation and management, which is more efficient than traditional cavity heating methods and does not require conductive connections or magnetic fields.
Implementation Method 1
The frequency can be adjusted, such as to a desired degree of excitation, such as to induce majority carriers in the semiconductor to oscillate to generate heat
Implementation Method 2
A non-zero frequency time-varying electric field can be capacitively applied (in an illustrative, non-limiting example), such as via local electrodes, to the semiconductor material
Data Source
Figure 1~2
Figure 3~4
Figure 5
AI summary
A semiconductor or other substrate can include one or more electrodes, located directly or indirectly on the substrate, separated from each other and coupled to the substrate. At the two or more electrodes, non-zero frequency time-varying electrical energy can be received. The time-varying electrical energy can be coupled via the two or more electrodes to trigger a displacement current to activate free carriers confined within the semiconductor substrate to generate frequency-controlled heat in the semiconductor substrate.