Capacitor Dielectric Conditioning for Higher Capacitance

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Solution Overview

Problem

As semiconductor devices become highly integrated, the capacitance of capacitors decreases due to reduced area, and existing methods to increase capacitance by reducing dielectric layer thickness or increasing dielectric constant are limited in effectiveness without damaging the layer or increasing leakage current.

Innovation Solution

A method of fabricating a capacitor by forming electrodes and a dielectric layer, and applying a voltage or current outside the operating range in the form of a sweep or pulse to increase the dielectric constant and capacitance, while maintaining the thickness of the dielectric layer to avoid leakage current issues.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the area of the capacitor is reduced to achieve high integration, then the device density is improved, but the capacitance decreases

Engineering Contradiction:
Improvedevice integration densityVSAvoidcapacitance
Core Design Contradiction:
ProductivityVSQuantity of substance

Solution Approach 1:

The patent applies parameter changes by subjecting the dielectric layer to high voltage or high current outside the operating range, which modifies the physical or chemical parameters of the dielectric material. This treatment increases the dielectric constant of the layer, thereby increasing capacitance without changing the capacitor area, resolving the contradiction between high integration density and sufficient capacitance.

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If the thickness of the dielectric layer is reduced to increase capacitance, then the capacitance is improved, but the leakage current increases

Engineering Contradiction:
ImprovecapacitanceVSAvoidleakage current
Core Design Contradiction:
Quantity of substanceVSObject-generated harmful factors

Solution Approach 1:

Instead of reducing thickness, the patent changes the dielectric parameter by applying high voltage or high current treatment to increase the dielectric constant. This approach increases capacitance while maintaining the same dielectric layer thickness, thereby avoiding the increase in leakage current that would result from thinning the layer.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies excessive action by using voltage or current that exceeds the normal operating range during the dielectric layer treatment. This excessive electrical stimulus modifies the dielectric properties of the layer, increasing its constant and thus the capacitance, without requiring the layer to be thinner and without causing harmful leakage during normal operation.

Inventive Principle:
Principle #16Partial or excessive action

3Quantity of substance

If the dielectric constant of the dielectric layer is increased to increase capacitance, then the capacitance is improved, but the manufacturing complexity increases

Engineering Contradiction:
ImprovecapacitanceVSAvoidmanufacturing process complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent changes the dielectric parameter through electrical treatment (high voltage or high current application) rather than through material substitution or complex multi-layer structures. This approach increases the dielectric constant using a relatively simple process step added to the existing manufacturing flow, minimizing the increase in manufacturing complexity while achieving the desired capacitance increase.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively increases capacitance by up to 10% without significantly increasing leakage current, maintaining the dielectric layer's integrity and preventing unwanted leakage, thus enhancing the performance of semiconductor devices.

Implementation Method 1

applying, between the first electrode and the second electrode, a voltage outside an operating voltage range applied during operation or a current outside an operating current range applied during operation... the applying... increases a capacitance of the capacitor

Methodology Applied
Scientific EffectDielectric constant change: Dielectric Permittivity

Data Source

PatentUS11990503B2Methods of fabricating capacitor and semiconductor device including the capacitor
Publication Date: 2024.05.21 SAMSUNG ELECTRONICS CO LTD
  • US11990503B2 patent drawing
  • US11990503B2 patent drawing
  • US11990503B2 patent drawing

AI summary

Provided is a method of fabricating a capacitor. The method of fabricating a capacitor may include forming a first electrode, forming a dielectric layer on the first electrode, forming a second electrode on the dielectric layer, and applying, between the first electrode and the second electrode, a voltage outside an operating voltage range applied during operation or a current outside an operating current range applied during operation.