Capacitor Electrode Structure for High-Aspect-Ratio Via Etching
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Solution Overview
Problem
The reduction in dimensions and increase in aspect ratio of conductive vias in electronic elements, such as capacitors, leads to damage or breakage of the thin conductive layer during etching, causing short circuits between adjacent vias.
Innovation Solution
A conductive structure is formed with a first and second support layer, an intermediate dielectric layer, and electrode layers, where the electrode layers have specific lateral surfaces protected by buffer materials during etching to prevent damage, ensuring consistent thickness and integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the dimensions of conductive vias are reduced and aspect ratio is increased to achieve high integration density, then integration density is improved, but the thin conductive layer on sidewalls is damaged or broken during etching causing short circuits
Solution Approach 1:
A buffer layer is introduced as an intermediary protective structure between the conductive layer and the etching environment. This buffer layer absorbs the mechanical stress and chemical exposure during etching, preventing direct damage to the thin conductive sidewall layer while enabling the formation of high aspect ratio vias with reduced dimensions
Solution Approach 2:
The buffer layer is formed in advance before the etching process, providing pre-protection to the conductive layer. By preparing this protective structure beforehand, the conductive layer is shielded from etching-induced damage, allowing for safer reduction of via dimensions and increase in aspect ratio
Data Source
AI summary
A conductive structure and a method of manufacturing a conductive structure are provided. The conductive structure includes a first support layer, a second support layer, a first electrode layer, an intermediate dielectric layer and a second electrode layer. The second support layer is disposed over and spaced apart from the first support layer. The first electrode layer includes a first part. The first part includes a first portion contacting the first support layer and a second portion contacting the second support layer. A thickness of the first portion is substantially equal to a thickness of the second portion. The intermediate dielectric layer is disposed on the first electrode layer. The second electrode layer is disposed on the intermediate dielectric layer.