Capacitor Interface Film Structure for High-Density DRAM Charge Storage
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Solution Overview
Problem
As semiconductor devices become more highly integrated, the amount of charge held in capacitors decreases, leading to challenges in increasing capacitance and improving leakage characteristics, particularly in DRAM structures where the short channel effect is prevalent.
Innovation Solution
A semiconductor device is designed with an interface film formed between the lower electrode and the capacitor dielectric film, which includes materials like metal oxide, metal nitride, or metal oxynitride, to enhance capacitance and reduce the difference between maximum and minimum capacitance values.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are highly integrated, then more semiconductor elements can be implemented in the same area, but the amount of charge held in capacitors decreases
Solution Approach 1:
The patent changes the physical and chemical parameters of the capacitor structure by introducing an interface film between the lower electrode and capacitor dielectric film. This interface film modifies the electrical properties at the interface, enabling higher capacitance density without increasing the physical size of the capacitor, thus maintaining charge storage capacity during high integration.
Solution Approach 2:
The patent employs composite material structure by combining the interface film (made of metal oxide, metal nitride, or metal oxynitride) with the capacitor dielectric film and lower electrode. This composite structure creates favorable interface properties that enhance capacitance, allowing more charge to be stored in the same area and counteracting the charge loss from high integration.
2Reliability
If an interface film is formed between the lower electrode and capacitor dielectric film, then capacitance increases and leakage characteristics improve, but the device structure becomes more complex
Solution Approach 1:
The interface film acts as an intermediary layer between the lower electrode and the capacitor dielectric film. This mediator layer improves the interface quality, reduces leakage paths, and enhances capacitance by creating favorable electrical properties at the interface, while adding only one thin layer that minimally increases structural complexity.
3Quantity of substance
If the interface film is formed to crystallize the capacitor dielectric film, then charge storage capability improves, but the manufacturing process becomes more complex
Solution Approach 1:
The interface film is formed in advance during the capacitor fabrication process, before the capacitor dielectric film is deposited. This preliminary action prepares the surface with favorable crystalline structure and chemical properties that promote effective crystallization of the subsequent dielectric film layer, enhancing charge storage capability while integrating the process into the existing manufacturing flow.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases capacitance and crystallizes the capacitor dielectric film, addressing the charge storage and leakage issues in highly integrated semiconductor devices by forming an interface film between the lower electrode and the capacitor dielectric film.
Implementation Method 1
The solution effectively increases capacitance and crystallizes the capacitor dielectric film
Data Source
AI summary
A semiconductor device includes a substrate, first and second supporter patterns stacked sequentially on the substrate in a first direction and spaced apart from an upper surface of the substrate, a lower electrode hole that extends through the first and second supporter patterns on the substrate in the first direction, an interface film on side walls and a bottom surface of the lower electrode hole, a lower electrode inside of the lower electrode hole on the interface film, a capacitor dielectric film that is in physical contact with side walls of the interface film, an uppermost surface of the interface film, and an uppermost surface of the lower electrode, the uppermost surface of the interface film is formed on a same plane as an upper surface of the second supporter pattern.