Capacitor Layer Interface Voids for Thermal Delamination Resistance
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Solution Overview
Problem
Stacked film layers in semiconductor devices are prone to delamination or fracture due to thermal expansion and contraction, leading to reduced performance.
Innovation Solution
Incorporating multiple voids between a semiconductor conductive layer and a cover layer with an undulating surface profile, where the voids block stress transmission and concentration, enhancing bonding strength and thermal stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a cover layer is disposed on a semiconductor conductive layer, then the bonding strength between layers is improved, but thermal expansion and contraction cause stress concentration leading to delamination
Solution Approach 1:
The patent introduces a porous layer between the semiconductor conductive layer and the cover layer. This porous layer acts as a stress buffer that absorbs thermal expansion and contraction forces, preventing stress concentration at the interface. The porous structure allows for controlled void spaces that accommodate thermal stress while maintaining overall layer bonding, thereby resolving the contradiction between achieving strong bonding and preventing thermal delamination.
2Ease of manufacture
If the cover layer has a flat surface, then manufacturing is simplified, but stress concentrates at the interface causing delamination
Solution Approach 1:
The patent applies local quality by creating a porous layer with specific void distributions at critical stress concentration zones while maintaining a relatively simple overall structure. The porous characteristics are localized at the interface region where stress management is most needed, rather than throughout the entire cover layer. This allows stress dispersion at the critical interface while keeping the rest of the manufacturing process relatively simple.
3Reliability
If voids are introduced between layers, then stress transmission is blocked preventing delamination, but manufacturing complexity increases
Solution Approach 1:
The patent utilizes a porous layer structure that provides void spaces for stress management while maintaining a relatively simple layered architecture. The porous characteristics are integrated into one of the existing layers rather than adding entirely separate void structures, thereby blocking stress transmission and preventing delamination without significantly increasing overall device structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents delamination and improves the performance and thermal stability of semiconductor devices by dispersing stress and reducing heat conduction.
Implementation Method 1
the multiple voids block the transmission of stress generated during a contraction or expansion process of the semiconductor conductive layer and/or the cover layer
Implementation Method 2
a surface of the cover layer facing the semiconductor conductive layer has an undulating surface profile, and the surface profile has peaks and valleys, the first portion being extended into the valleys
Data Source
AI summary
The present application provides a semiconductor device and a semiconductor apparatus. The semiconductor device includes a substrate, a capacitor structure, a semiconductor conductive layer, a cover layer, and multiple voids; where the capacitor structure is disposed on the substrate; the capacitor structure includes multiple capacitors; the semiconductor conductive layer includes a first portion and a second portion, the first portion covers the capacitor structure and directly contacts the capacitor structure; the second portion is filled between adjacent capacitors; the cover layer is located on the first portion and is in direct contact with the first portion; a surface of the cover layer facing the semiconductor conductive layer has an undulating surface profile, and the surface profile has peaks and valleys, the first portion being extended into the valleys; at least one void is located within the first portion in the valley.