Semiconductor Capacitor Lower Electrode Support Structure
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Solution Overview
Problem
As semiconductor devices integrate more densely and design rules shrink, capacitors in these devices can develop high aspect ratios, leading to lower electrodes that may lean or collapse, and issues with short-circuits or bridges between adjacent electrodes due to high aspect ratios and small critical dimensions.
Innovation Solution
The use of first and second supporting layer patterns, made from materials like silicon nitride or silicon carbide, which extend perpendicularly to each other to support the lower electrodes, preventing leaning or collapsing and controlling the width of the electrodes to prevent short-circuits or bridges, with these patterns being formed before the electrodes and serving as etching masks during the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the integration degree of semiconductor device increases and design rule decreases, then the capacitor aspect ratio increases, but the lower electrode may lean or collapse
Solution Approach 1:
The supporting structure is divided into multiple segments: first supporting layer patterns extending in a first direction and second supporting layer patterns extending in a second direction perpendicular to the first direction. This segmented approach provides comprehensive support to the lower electrode from multiple directions, preventing leaning and collapse while enabling higher integration density
Solution Approach 2:
The patent introduces supporting layer patterns that extend in directions perpendicular to the main height direction of the capacitor. By adding support structures in lateral dimensions (first direction and second direction), the lower electrode gains stability against leaning and collapse without increasing the capacitor's height, thus maintaining the high aspect ratio while improving structural integrity
2Productivity
If the design rule decreases, then the distance between adjacent electrodes decreases, but short-circuits or bridges may occur between electrodes
Solution Approach 1:
The first and second supporting layer patterns are formed before the lower electrode is deposited. These supporting layer patterns pre-establish the spacing and positioning framework that prevents adjacent electrodes from coming into contact, thereby preventing short-circuits and bridges before they can occur during subsequent processing steps
Solution Approach 2:
The supporting layer patterns act as intermediary structures between adjacent lower electrodes. These intermediate supporting layers maintain the required spacing and provide mechanical support that prevents the electrodes from leaning toward each other and forming short-circuits or bridges, enabling closer electrode spacing while maintaining reliability
Data Source
AI summary
A semiconductor device includes a plurality of lower electrodes on a substrate, with each of the lower electrodes extending in a height direction from the substrate and including sidewalls, the lower electrodes being spaced apart from each other in a first direction and in a second direction, a plurality of first supporting layer patterns contacting the sidewalls of the lower electrodes, the first supporting layer patterns extending in the first direction between ones of the lower electrodes adjacent in the second direction, a plurality of second supporting layer patterns contacting the sidewalls of the lower electrodes, the second supporting layer pattern extending in the second direction between ones of the lower electrodes adjacent in the first direction, the plurality of second supporting layer patterns being spaced apart from the plurality of first supporting layer patterns in the height direction.