Capacitor-Based OTP Memory for Compact Chip Area
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Solution Overview
Problem
Traditional OTP memory requires large chip area and additional manufacturing processes due to the use of electronic fuses, increasing costs.
Innovation Solution
A dynamic random access memory with a two-stage programming method that breaks down a capacitor without using electronic fuses, utilizing a transistor and capacitor configuration to program data states without the need for fuses, allowing for a small-area one time programmable memory solution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional OTP memory uses electronic fuses to store data, then the memory can achieve one-time programmable functionality, but the chip area increases and additional manufacturing processes are required
Solution Approach 1:
The patent extracts and removes the electronic fuse component from the memory structure, replacing it with a capacitor-based storage mechanism. This eliminates the need for fuse-related manufacturing processes while maintaining OTP functionality through capacitor charge state programming
Solution Approach 2:
The patent changes the fundamental storage parameter from fuse resistance state to capacitor charge state. By programming the capacitor to hold different voltage levels (charged or discharged), the memory achieves OTP functionality without requiring physical fuse destruction, thereby reducing chip area and simplifying manufacturing
2Reliability
If traditional OTP memory uses electronic fuses, then data can be stored permanently, but the manufacturing cost increases due to additional processes
Solution Approach 1:
The capacitor structure serves multiple functions: it acts as both the storage element and the programming target. The same capacitor that stores data can be programmed through standard voltage application, eliminating the need for separate fuse programming processes and reducing manufacturing complexity
Solution Approach 2:
The patent uses a simple capacitor structure that can be programmed once and then maintains its state without requiring complex protective structures. The capacitor's charge state provides permanent storage equivalent to fuse functionality but with simpler, more cost-effective manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables a compact and cost-effective one time programmable memory solution by eliminating the need for electronic fuses, reducing chip area requirements and manufacturing complexity.
Implementation Method 1
applying a first voltage and a second voltage to the bit line and the second terminal of the capacitor respectively to break down the capacitor
Data Source
AI summary
The present invention relates to a dynamic random access memory and a programming method therefor with two stages. In a first stage, a capacitor of a memory cell of the dynamic random access memory is broken down, so that the dynamic random access memory becomes a one-time programmable memory. In a second stage, a resistance of the capacitor that is broken down is reduced, so that state data of the memory cell can be more easily interpreted.