Capacitor Structure Using P-N Junctions to Lower Parasitic Capacitance
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Solution Overview
Problem
Existing electronic devices suffer from high parasitic capacitance, which degrades signal quality in galvanically isolated systems, and conventional methods to reduce parasitic capacitance introduce complexities in post-production processes.
Innovation Solution
Incorporating a floating P-well and an N-type buried layer to create a P-N junction in series with the parasitic capacitance, forming a junction capacitance that lowers the overall parasitic capacitance without increasing process complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the thickness of the dielectric layer is increased to lower parasitic capacitance, then parasitic capacitance is reduced, but the aspect ratio of metal contacts increases and process complexity increases
Solution Approach 1:
An intermediate N-type buried layer is introduced between the P-type semiconductor body and the bottom metal layer of the capacitor. This intermediate layer acts as a mediator that creates a P-N junction, generating junction capacitance in series with the parasitic capacitance, thereby reducing the overall parasitic capacitance without requiring increased dielectric thickness or additional metal levels.
Solution Approach 2:
The invention changes the electrical parameters of the semiconductor structure by introducing doped regions (N-type buried layer and P-well) to create a P-N junction. This parameter change enables the generation of junction capacitance that operates in series with the parasitic capacitance, achieving capacitance reduction through electrical property modification rather than geometric modification.
2Object-affected harmful factors
If the distance between the bottom metal layer and the insulating layer is increased to lower parasitic capacitance, then parasitic capacitance is reduced, but the number of metal levels increases and process complexity increases
Solution Approach 1:
An intermediate N-type buried layer is introduced between the P-type semiconductor body and the bottom metal layer of the capacitor. This intermediate layer acts as a mediator that creates a P-N junction, generating junction capacitance in series with the parasitic capacitance, thereby reducing the overall parasitic capacitance without requiring increased dielectric thickness or additional metal levels.
Solution Approach 2:
The invention changes the electrical parameters of the semiconductor structure by introducing doped regions (N-type buried layer and P-well) to create a P-N junction. This parameter change enables the generation of junction capacitance that operates in series with the parasitic capacitance, achieving capacitance reduction through electrical property modification rather than geometric modification.
3Object-affected harmful factors
If conventional methods are used to reduce parasitic capacitance, then parasitic capacitance is reduced, but signal quality degradation persists due to process complexities
Solution Approach 1:
An intermediate N-type buried layer is introduced between the P-type semiconductor body and the bottom metal layer of the capacitor. This intermediate layer acts as a mediator that creates a P-N junction, generating junction capacitance in series with the parasitic capacitance, thereby reducing the overall parasitic capacitance without requiring increased dielectric thickness or additional metal levels.
Solution Approach 2:
The invention changes the electrical parameters of the semiconductor structure by introducing doped regions (N-type buried layer and P-well) to create a P-N junction. This parameter change enables the generation of junction capacitance that operates in series with the parasitic capacitance, achieving capacitance reduction through electrical property modification rather than geometric modification.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The P-N junction effectively reduces parasitic capacitance, improving signal quality in galvanically isolated systems by introducing a series capacitance that modulates without additional process complexity.
Implementation Method 1
the P-N junction effectively reduces parasitic capacitance, improving signal quality in galvanically isolated systems by introducing a series capacitance
Data Source
AI summary
Electronic device including a primary capacitor extending on a semiconductor body accommodating a floating P-well and an N-type buried layer, to provide a P-N junction. This structure introduces a junction capacitance in series with the parasitic capacitance that the primary capacitor forms with the semiconductor body, effectively lowering the overall parasitic capacitance of the electronic device.