Semiconductor Capacitor Support Patterns for Cracking Prevention
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Solution Overview
Problem
Semiconductor devices face challenges in increasing capacitance without risking cracking, particularly due to the high aspect ratio of lower electrodes leading to leaning or bending during the mold removal process, which existing solutions fail to adequately address.
Innovation Solution
A semiconductor device design featuring a substrate with first and second lower electrodes, support patterns, and a dielectric layer, where the thickness of the first lower support pattern is smaller than the second, and upper electrodes are formed with varying lengths to enhance capacitance while preventing cracking by adjusting the thickness of support patterns and etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the aspect ratio of the lower electrode is increased to provide higher capacitance, then the capacitance increases, but leaning or bending in the lower electrode occurs during the mold removal process
Solution Approach 1:
The support structure is divided into multiple segments: lower support patterns positioned at different heights along the lower electrode, and an upper support pattern connecting them. This segmented approach provides distributed support to prevent bending while accommodating the high aspect ratio of the lower electrode.
Solution Approach 2:
The support patterns are strategically positioned at specific locations along the lower electrode where bending stress is most likely to occur. The lower support patterns are placed at different heights, and the upper support pattern connects them, providing localized reinforcement exactly where needed to maintain stability during mold removal.
2Stability of the object's composition
If support patterns are added to prevent leaning or bending of lower electrodes, then lower electrode stability improves, but the device complexity increases
Solution Approach 1:
Multiple support functions are merged into a unified support pattern structure. The lower support patterns and upper support pattern work together as an integrated system to provide comprehensive support, eliminating the need for separate, additional support mechanisms and reducing overall structural complexity.
Solution Approach 2:
The support patterns serve multiple functions simultaneously: they provide mechanical support to prevent bending, maintain structural integrity during mold removal, and support the dielectric layer and upper electrode. This multi-functionality reduces the need for additional specialized components.
3Reliability
If the thickness of lower support patterns is increased to prevent cracking, then reliability improves, but manufacturing precision requirements increase
Solution Approach 1:
The support patterns have varying thicknesses at different locations and heights, optimized for their specific functional requirements. This local variation in thickness provides crack resistance where needed while maintaining manufacturability, avoiding the need for uniformly thick support structures that would be difficult to manufacture.
Solution Approach 2:
The support structure is segmented into multiple patterns at different heights, each with optimized thickness. This segmentation allows each segment to be manufactured within feasible precision tolerances while collectively providing the necessary crack resistance and structural support.
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region including first and second regions, and a peri region more adjacent to the second region than adjacent to the first region, first and second lower electrodes disposed in the first and second regions, respectively, first and second lower support patterns disposed on outer walls of the first and second lower electrodes, respectively, an upper support pattern disposed on outer walls of the first and second lower electrodes, and being on and spaced apart from the first and second lower support patterns, a dielectric layer disposed on surfaces of the first and second lower electrodes, the first and second lower support patterns, and the upper support pattern, and an upper electrode disposed on a surface of the dielectric layer, wherein thickness of the first lower support pattern is smaller than thickness of the second lower support pattern.