On-Chip Capacitors With Selective Dielectric Thickness for Voltage Reliability
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Solution Overview
Problem
Existing semiconductor capacitors face challenges in achieving high capacitance density while maintaining reliability and efficiency, as they require a uniform dielectric thickness to withstand varying voltages, leading to either reduced capacitance or increased surface area.
Innovation Solution
A method is developed to form capacitors with different dielectric thicknesses on the same semiconductor substrate by using protective layers to isolate and selectively deposit dielectric layers on each capacitor, allowing for tailored thicknesses and aspect ratios, enabling the formation of multiple capacitors with varying breakdown voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a uniform dielectric thickness is used to withstand the highest voltage, then reliability is improved, but capacitance density deteriorates
Solution Approach 1:
The patent applies local quality by assigning different dielectric thicknesses to different capacitors based on their specific voltage requirements. Each capacitor receives a customized dielectric layer thickness that matches its operational needs, rather than using a uniform thickness across all capacitors. This resolves the contradiction by allowing high-voltage capacitors to have thicker dielectrics for reliability while low-voltage capacitors have thinner dielectrics for higher capacitance density.
2Quantity of substance
If the dielectric thickness is reduced to increase capacitance density, then capacitance density is improved, but reliability deteriorates
Solution Approach 1:
The patent implements local quality by customizing the dielectric thickness for each capacitor according to its voltage requirements. Low-voltage capacitors receive thinner dielectric layers that maximize capacitance density, while high-voltage capacitors receive thicker dielectric layers that ensure reliability. This selective approach resolves the contradiction between capacitance density and reliability.
3Ease of manufacture
If all capacitors are manufactured with the same dielectric thickness, then manufacturing simplicity is improved, but adaptability deteriorates
Solution Approach 1:
The patent applies preliminary action by forming protective layers over selected capacitors before the dielectric deposition process. These protective layers prevent dielectric material from being deposited on specific capacitors, allowing them to receive different thicknesses in subsequent processing steps. This enables customized dielectric thicknesses for different voltage requirements while using standard manufacturing processes.
4Adaptability or versatility
If protective layers are used to selectively deposit dielectric layers, then adaptability is improved, but device complexity increases
Solution Approach 1:
The patent uses preliminary action by depositing protective layers in advance before the main dielectric layer formation. These protective layers serve as masks that control where dielectric material will be deposited. After the dielectric deposition, the protective layers are removed. This approach enables customized dielectric thicknesses using standard deposition and removal processes, managing complexity through a systematic sequence of familiar manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for increased capacitance density while ensuring reliable operation across different voltage levels without the need for uniform dielectric thickness, optimizing both capacitance and reliability on a single chip.
Implementation Method 1
forming a first protective layer above the bottom electrode region of the second capacitor (this step leaves the bottom electrode region of the first capacitor exposed, i.e. the first protective layer does not extend above the bottom electrode region of the first capacitor)
Implementation Method 2
forming a first dielectric layer having a first thickness above the bottom electrode region of the first capacitor
Implementation Method 3
forming a second protective layer above the first dielectric layer and above the bottom electrode region of the first capacitor (this step leaves the bottom electrode region of the second capacitor exposed, i.e. the first protective layer does not extend above the bottom electrode region of the first capacitor)
Implementation Method 4
removing the first protective layer to expose the bottom electrode region of the second capacitor
Implementation Method 5
forming a second dielectric layer having a second thickness above the second electrode region of the second capacitor, the first thickness and the second thickness being different
Implementation Method 6
forming a top electrode region of the first capacitor above the bottom electrode of the first capacitor and above the first dielectric layer so as to form the first capacitor
Data Source
AI summary
An electronic product having a first capacitor and a second capacitor, where the electronic product includes a semi-conductor substrate having a bottom electrode region of the first capacitor and a bottom electrode region of the second capacitor; a first dielectric layer having a first thickness arranged above the bottom electrode region of the first capacitor; a second dielectric layer having a second thickness arranged above the bottom electrode region of the second capacitor, the first thickness and the second thickness being different; a top electrode region of the first capacitor arranged above the bottom electrode of the first capacitor and above the first dielectric layer; and a top electrode region of the second capacitor arranged above the bottom electrode of the second capacitor and above the second dielectric layer.