Amorphous Carbon CMP Slurry for Fast Removal and Residue Control
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Solution Overview
Problem
Current semiconductor polishing compositions have low removal rates for amorphous carbon layers and result in carbon residue adsorption on substrates, leading to defects, with poor stability at high temperatures and during long-term storage.
Innovation Solution
A polishing composition containing abrasive particles, an accelerator, and a stabilizer, with a specific weight ratio, is used to enhance the removal rate of amorphous carbon layers while preventing carbon residue adsorption and maintaining stability at elevated temperatures and during storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polishing composition is used for amorphous carbon layer, then carbon residue is removed, but removal rate is low and carbon residue adsorption occurs on substrate
Solution Approach 1:
The patent changes the chemical composition parameters of the polishing slurry by introducing a specific accelerator (ammonium persulfate or potassium persulfate) and stabilizer (amino acid) system. This chemical parameter modification enables high-speed removal of amorphous carbon while preventing carbon residue adsorption on the substrate, resolving the contradiction between removal rate and residue generation
Solution Approach 2:
The patent creates a composite chemical system combining abrasive particles with a specific ratio of accelerator (1-5 wt%) and stabilizer (0.1-5 wt%). This composite formulation works synergistically to achieve both high removal rate and prevention of carbon residue adsorption, solving the technical contradiction
2Productivity
If accelerator is added to polishing composition, then removal rate increases, but stability at high temperature and during storage decreases
Solution Approach 1:
The patent introduces a stabilizer (amino acid) as an intermediary substance that mediates between the accelerator and the polishing environment. The amino acid stabilizer prevents degradation of the accelerator at high temperatures and during storage, while allowing the accelerator to maintain its high removal rate function during active polishing operations
Solution Approach 2:
The stabilizer is added in advance to the polishing composition to cushion against potential degradation of the accelerator. This preemptive measure ensures that the accelerator remains stable during storage and high-temperature conditions, preventing loss of polishing performance before the actual polishing process begins
3Reliability
If polishing composition is stored for long term or exposed to high temperature, then polishing performance degrades, but storage stability is required
Solution Approach 1:
The amino acid stabilizer acts as a protective intermediary that shields the accelerator from thermal degradation and oxidation during storage. This intermediary function maintains the accelerator's effectiveness, ensuring consistent polishing performance is preserved throughout long-term storage and after high-temperature exposure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves a high removal rate of amorphous carbon layers, prevents substrate defects, and maintains polishing performance even after long-term storage and high-temperature exposure, ensuring efficient and defect-free semiconductor fabrication.
Implementation Method 1
the accelerator may include ammonium persulfate or potassium persulfate
Implementation Method 2
the polishing composition may contain abrasive particles, an accelerator, and a stabilizer
Data Source
AI summary
The present invention relates to a polishing composition for a semiconductor process, a method of preparing the polishing composition, and a method of fabricating a semiconductor device using the polishing composition. The polishing composition for a semiconductor process may be applied to a process of polishing an amorphous carbon layer, may exhibit a high removal rate of the amorphous carbon layer, may prevent the occurrence of defects by preventing carbon residue from being re-adsorbed onto a semiconductor substrate during the polishing process, and has excellent storage stability. The present invention may also provide a method of fabricating a semiconductor device using the polishing composition for a semiconductor process.