Other Chemical Processes TRIZ Cases

A positively charged abrasive and negatively charged oxidizer raise silicon carbide removal rates while reducing scratching and roughness.

A low-pH silica slurry with cerium ammonium nitrate boosts boron-polysilicon removal while preserving silicon nitride and titanium nitride.

A permanganate slurry with alkaline-earth and group 3-16 metal salts raises SiC polishing removal while limiting pad temperature rise.

Heat-treated rice husk carbon with alkali-formed mesopores improves lithium release, cycling, adsorption, and drug delivery performance.

Limiting Cu and Ni in the final stock polishing slurry cuts polishing-induced defects while preserving smooth silicon substrate finishing.

Polymer-coated alumina and sulfonate or sulfate inhibitors improve TiN over SiN CMP selectivity, helping control gate height and limit barrier erosion.

A PPO-zeolite getter paste removes moisture and VOCs in sealed electronic and optoelectronic devices without sacrificing dispensability.

A ray-curable sealant absorbs leaked oil before curing, then hardens into a durable pipe seal to stop discharge beyond flange sections.

By limiting initiator-inhibitor reaction products to 0.1 ppb or less, this CMP slurry reduces LPDs while preserving wafer smoothness.

A quaternary silane-silicone coating helps wiper blades keep windshield water repellency under abrasion while reducing chatter and skipping.

A solvent-mediated copper complex composition resists moisture and heat aggregation while preserving near-infrared absorption in imaging films.

Controlled polyolefin crystallinity in the sealant layer suppresses bending cracks while preserving insulation, sealing strength, and moldability.

An amide-stabilized silylating treatment forms a hydrophobic monolayer on semiconductor substrates to reduce drying stress and prevent pattern collapse.

Doped organic-inorganic porous material creates ion transport pathways in separators, improving lithium-ion battery cycle and rate performance.

High-filler epoxy sealing resin cuts wafer warpage and stress while maintaining viscosity and heat resistance for larger semiconductor wafers.

An oxidizing fluid with multivalent cations enables abrasive-free ceramic CMP, reducing scratches while maintaining pad cleanliness and removal rate.

Sequential final polishing on one platen uses a lower-haze slurry with hydroxyethyl cellulose to cut defects and haze on silicon-bond surfaces.

Nitrogen-containing CMP additives protect silicon stopper surfaces during polishing, suppressing chemical-action defects and improving surface reliability.

A ferrite coating applied before sintering preserves magnetic response, avoids agglomeration, and enables precise abrasive particle orientation.

A poor-solvent ink formulation balances extrusion and cohesion to prevent screen adhesion, print sagging, and rough thick gasket surfaces.

Wet-process ceria with a cationic polymer and aromatic carboxylic acid raises oxide CMP removal rates while limiting trench loss.

Surface-coated CMP abrasives balance tungsten and oxide removal to improve planarity and reduce erosion during acidic buff polishing.

A polyoxometalate ionic liquid helps cable compounds form protective char, cut smoke, and keep mechanical strength at lower filler loading.

A carbodiimide-modified radical-curable seal maintains flexibility and stretch in fuel cells by limiting heat- and water-driven embrittlement.

A two-stage slurry switch balances removal rate and surface roughness, enabling one silicon wafer polishing flow across wide resistivity ranges.

A fluorinated polymer with Si-O bonds replaces silica-filled O-ring materials to maintain strength while reducing contamination in plasma-exposed semiconductor seals.

Abrasive particles with persulfate accelerator and amino acid stabilizer raise amorphous carbon removal while limiting residue adsorption and storage loss.

A dual-amino-acid tungsten CMP slurry with cationic abrasives improves planarity, suppresses etching and dishing, and stays stable at low pH.

A MOF-polymer adsorbent layer captures lead ions from damaged perovskite solar cells, reducing toxic leakage during breakage and disposal.

Irregular porous silica particles grown with a silica coating keep shape irregularity for faster polishing with fewer scratches.

Calcium titanate-filled epoxy molding resin balances high dielectric constant with low loss tangent to cut transmission loss in miniaturized high-frequency packages.

A zirconia and hydroxylamine CMP slurry raises copper removal while preserving low roughness and selectivity over silicon dioxide.

Manganese dioxide slurry boosts gallium oxide substrate polishing speed while reducing cracks, scratches, and damage depth.

Nearly spherical negatively charged abrasives with polymer and alkali salt raise CMP speed while reducing scratches on semiconductor substrates.

Inorganic fine particles raise perovskite quantum yield by improving light absorption and reducing defect sites in light-emitting films.

Porous-template granulation preserves surface area in titanium lithium ion sieve adsorbents while improving filtration, strength, and lithium uptake.

A tuned CMP slurry balances oxide, nitride, and copper polishing rates in TSV wafers to reduce dishing, erosion, protrusion, and peaking.

Controlled pH, redox potential, and additive balance help CMP slurry equalize oxide, nitride, and copper removal on TSV wafers while limiting dishing and erosion.

Surface-modified magnesium oxide getter improves transparent OLED sealing by blocking water and oxygen without sacrificing light transmittance.

Zirconia-core, silica-shell CMP particles and a chelating agent help keep hydrogen peroxide stable while sustaining removal rates on copper, TaN, and SiO2.

A transition metal oxy compound and per-based oxidizer boost hard-material CMP removal rates while limiting temperature rise and defects.

Tetraalkylammonium ions boost silica wettability so wafer polishing can remove laser mark protrusions and achieve a flat surface in fewer steps.

Hydrosilylation-cured polyorganosiloxane enables primer-free adhesion in photovoltaic modules while avoiding discoloration, volatiles, and vacuum lamination.

A CMP slurry balances cobalt and dielectric removal while using azole inhibitors to limit cobalt corrosion and topography defects.

Dual-chelator CMP chemistry boosts copper removal while limiting static etching and preserving selectivity to TSV barrier and dielectric films.

A mesoporous shell template and halogen-containing polymer precursor create porous carbon with much higher surface area and pore volume.

Pressure-sensitive auto-stop slurry planarizes 3D memory dielectric layers without a stop layer, reducing residual steps, dishing, and defects.

Replacing hydrogen peroxide with alternative oxidizers in cobalt CMP improves slurry stability and compatibility while maintaining fast removal and low dishing.

Magnetizable abrasives guided by a magnetic field improve CMP removal rate and uniformity while reducing scratches, aggregation, and pad wear.

Matching relative haze between intermediate and final polishing slurries helps silicon wafers achieve smoother surfaces with fewer defects.