Semiconductor Polishing Composition for TSV Defect-Free Planarization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor manufacturing is achieving precise planarization of complex surfaces with multiple film layers, such as those with through-silicon vias (TSV), where conventional polishing compositions often result in defects like dishing, protrusion, erosion, and peaking due to variations in polishing rates between silicon oxide, silicon nitride, and copper films.
Innovation Solution
A polishing composition comprising abrasive grains and additives, with a specific etching ratio correlation value ranging from 1.45 to 1.90, is used to polish silicon oxide, silicon nitride, and copper films, ensuring uniformity and minimizing defects by optimizing the polishing rates and chemical mechanical polishing process conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional polishing compositions are used to polish multiple film layers, then the polishing process can be performed, but defects like dishing, protrusion, erosion, and peaking occur due to variations in polishing rates between different films
Solution Approach 1:
The patent applies parameter changes by precisely controlling the pH value (2.0-4.0) and redox potential (0.2-0.8V) of the polishing composition, along with specific concentrations of oxidizing agents (0.01-5 wt%) and complexing agents (0.01-5 wt%). These parameter optimizations enable uniform polishing rates across silicon oxide, silicon nitride, and copper films, preventing defects like dishing, protrusion, erosion, and peaking while achieving the desired planarization uniformity.
2Adaptability or versatility
If the degree of integration increases and chip size decreases, then more complex surface structures are achieved, but higher precision planarization and control are required
Solution Approach 1:
The patent addresses complex surface structures through parameter changes by optimizing multiple composition parameters simultaneously: pH (2.0-4.0), redox potential (0.2-0.8V), oxidizing agent concentration (0.01-5 wt%), and complexing agent concentration (0.01-5 wt%). This multi-parameter control enables the polishing composition to adapt to complex multi-layer surfaces with through-silicon vias, achieving uniform planarization precision across diverse film structures including silicon oxide, silicon nitride, and copper.
Solution Approach 2:
The patent employs intermediaries (oxidizing agents and complexing agents) that mediate the interaction between abrasive grains and different film materials. These intermediaries create a controlled chemical environment that enables uniform material removal rates across dissimilar films, allowing the polishing process to handle complex integrated structures with varying film compositions and thicknesses.
3Manufacturing precision
If minute differences in process components are made, then polishing results vary significantly, but achieving desired precision becomes more difficult
Solution Approach 1:
The patent systematically manages process sensitivity through parameter changes by defining precise ranges for pH (2.0-4.0), redox potential (0.2-0.8V), and component concentrations. This structured parameter control transforms the sensitivity to minute differences into a controllable design space, where small adjustments within specified ranges enable fine-tuning of polishing rates for different films without causing unpredictable variations or defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively prevents defects like dishing, protrusion, and erosion, achieving a uniformly polished surface without deviations between films, thereby enhancing the quality of semiconductor devices and minimizing defect rates in laminated chips connected by TSVs.
Implementation Method 1
chemical mechanical polishing is a technique of polishing the surface of a polishing target to a desired level by injecting polishing slurry into the interface between a polishing pad and the polishing target while rubbing the surface of the polishing target with the polishing pad
Implementation Method 2
This CMP process is a process of planarizing a film by simultaneously using physical frictional force and chemical reaction
Implementation Method 3
This CMP process is a process of planarizing a film by simultaneously using physical frictional force and chemical reaction
Data Source
Figure 1
Figure 2
Figure 3
AI summary
Aa polishing composition and method for semiconductor processing being applicable to a semiconductor process including a process of polishing a semiconductor wafer including a through-silicon via (TSV), being capable of implementing excellent polishing performance, being capable of minimizing defects such as dishing, erosion, and protrusion, being capable of realizing an evenly polished surface without deviation between films when polishing a surface where a plurality of different films is exposed to the outside, including abrasive grains and at least one additive, and having a value of 1.45 to 1.90 as calculated by Equation 1. the polishing composition