CMP Polishing Composition for Uniform TSV Multi-Film Planarization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor manufacturing is achieving precise polishing of complex surfaces with multiple film layers, such as through-silicon via (TSV) structures, where existing chemical mechanical polishing (CMP) processes often result in defects like dishing, protrusion, erosion, and peaking due to variations in polishing rates and chemical reactions.
Innovation Solution
A polishing composition comprising abrasive grains and additives, with specific etching ratio correlation values calculated by Equations 1 to 4, is used to ensure uniform polishing of silicon oxide, silicon nitride, and copper films, optimizing the polishing process to prevent defects and achieve even surface flatness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional CMP process is used for polishing multiple film layers, then polishing can be performed on complex surfaces, but defects such as dishing, protrusion, erosion, and peaking occur due to variations in polishing rates
Solution Approach 1:
The patent applies parameter changes by carefully controlling the pH value of the polishing composition within a specific range of 2.0 to 5.0, and by adjusting the concentrations of multiple additives (azole-based compound: 0.01-5.00 parts by weight, phosphoric acid-based compound: 0.10-2.00 parts by weight, fluorine-based compound: 0.01-1.00 parts by weight) to optimize the polishing rates of different film layers. This resolves the contradiction by tuning chemical parameters to achieve uniform polishing across diverse film types while maintaining the ability to handle complex multi-layer structures
2Productivity
If polishing rate is increased to improve productivity, then manufacturing efficiency increases, but polishing uniformity across different film layers deteriorates
Solution Approach 1:
The patent resolves this contradiction by changing multiple parameters simultaneously: controlling pH in the range of 2.0-5.0, optimizing abrasive grain concentration (0.5-5.0 wt%), and adjusting additive concentrations to achieve a balanced polishing rate. The synergistic effect of these parameter changes enables high productivity while maintaining uniform polishing across silicon oxide, silicon nitride, and copper films with different chemical properties
Solution Approach 2:
The polishing composition uses a composite formulation combining multiple additive types (azole-based, phosphoric acid-based, fluorine-based compounds) with abrasive grains. This composite approach allows the composition to interact with different film materials through multiple mechanisms, achieving both high polishing rate and uniformity across diverse film layers that would be impossible with a single-component system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively minimizes defects and ensures even polishing across multiple film layers, enhancing the quality of semiconductor devices by maintaining precise control over polishing rates and chemical interactions, thereby improving the manufacturing process efficiency and device performance.
Implementation Method 1
chemical mechanical polishing is a process of planarizing a film by simultaneously using physical frictional force and chemical reaction
Implementation Method 2
chemical mechanical polishing is a technique of polishing the surface of a polishing target to a desired level by injecting polishing slurry into the interface between a polishing pad and the polishing target while rubbing the surface of the polishing target with the polishing pad
Data Source
AI summary
A polishing composition and method for semiconductor processing being applicable to a semiconductor process including a process of polishing a semiconductor wafer including a through-silicon via (TSV), being capable of implementing excellent polishing performance, being capable of minimizing defects such as dishing, erosion, and protrusion, being capable of realizing an evenly polished surface without deviation between films when polishing a surface where a plurality of different films is exposed to the outside, including abrasive grains and at least one additive, and having a value of 1.45 to 1.90 as calculated by Equation 1.