Carbon-Containing Phase Change Memory Structure for Thermal Management
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Solution Overview
Problem
Next-generation semiconductor devices face challenges in achieving high performance and low power consumption, particularly in maintaining resistance values when current or voltage is interrupted, and in ensuring reliable data storage and switching operations.
Innovation Solution
A semiconductor device structure incorporating a semiconductor substrate with conductive structures, data storage patterns, and switching patterns, including carbon-containing layers, along with a hole spacer to manage the data storage material and reduce operating current, and improve thermal management and contact stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If next-generation memory devices are designed to maintain resistance values when current or voltage is interrupted, then data storage reliability is improved, but power consumption and heat generation become critical challenges
Solution Approach 1:
The patent utilizes phase change material properties that allow resistance value maintenance through temperature parameter control. By heating the phase change material above its melting point and then allowing it to cool, the material transitions between amorphous (high resistance) and crystalline (low resistance) states, enabling non-volatile data storage without continuous power supply.
Solution Approach 2:
The core invention relies on phase transitions of the phase change material between amorphous and crystalline states. This phase change enables the material to maintain different resistance values indefinitely without power, achieving reliable data storage. The melting point transition is specifically exploited to reset the material state.
2Reliability
If the phase change material is heated to melt and cool for data storage, then resistance values are maintained reliably, but heat loss reduces efficiency
Solution Approach 1:
The patent converts the harmful heat loss into a beneficial mechanism by using the phase change material's melting point transition. The heat that would otherwise be wasted is utilized to melt the material, and the subsequent cooling process naturally creates the amorphous state for data storage, transforming energy loss into a functional reset mechanism.
Solution Approach 2:
The phase transition from solid to liquid at the melting point is exploited to reset the phase change material. By controlling the heating and cooling through the melting point, the material can be reliably returned to its initial amorphous state, ensuring consistent data storage operation.
3Temperature
If carbon-containing layers are used in conductive structures, then thermal management is improved, but manufacturing complexity increases
Solution Approach 1:
The patent employs composite conductive structures containing carbon materials combined with other conductive materials. This composite approach provides superior thermal management properties while maintaining electrical conductivity. The carbon-containing layers serve dual functions of electrical conduction and heat dissipation, managing thermal effects in the phase change material.
Solution Approach 2:
The carbon-containing conductive layers perform multiple functions simultaneously: they provide electrical conductivity for current flow and serve as thermal management structures for heat dissipation. This multi-functionality reduces the need for separate thermal management components, though the manufacturing process becomes more complex.
4Use of energy by moving object
If the data storage material pattern width is reduced to decrease operating current, then power consumption is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent reduces the width parameter of the data storage material pattern to decrease the amount of material requiring heating, thereby reducing operating current and power consumption. This dimensional parameter change directly impacts the energy required for phase transitions while imposing stricter requirements on manufacturing precision for consistent pattern formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure enhances the performance and reliability of semiconductor devices by maintaining stable resistance values, reducing operating current, and preventing heat loss, thereby improving durability and scalability.
Implementation Method 1
at least one among the lower layers including carbon
Implementation Method 2
data storage material capable of maintaining a resistance value, even when a current or voltage supply is interrupted
Data Source
AI summary
A semiconductor device includes a base structure comprising a semiconductor substrate, a first conductive structure disposed on the base structure, and extending in a first direction, the first conductive structure including lower layers, and at least one among the lower layers including carbon, and a data storage pattern disposed on the first conductive structure. The semiconductor device further includes an intermediate conductive pattern disposed on the data storage pattern, and including intermediate layers, at least one among the intermediate layers including carbon, a switching pattern disposed on the intermediate conductive pattern, and a switching upper electrode pattern disposed on the switching pattern, and including carbon. The semiconductor device further includes a second conductive structure disposed on the switching upper electrode pattern, and extending in a second direction intersecting the first direction, and a hole spacer disposed on a side surface of the data storage pattern.