Carbon Carrier for Semiconductor Wafer Handling
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Solution Overview
Problem
The handling of thinner semiconductor wafers is complicated by their brittleness and thermal budget, and existing auxiliary carriers may introduce additional challenges in process technology, while attempts to reduce wafer thickness for improved device characteristics are hindered by mechanical instability and cost considerations.
Innovation Solution
A carrier with a continuous carbon structure and reinforcing material, such as carbon nanotubes or molybdenum, is used to attach and separate semiconductor wafers, providing mechanical stability and thermal stability up to 1300°C, allowing for the formation of semiconductor device structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wafer thickness is reduced to improve device characteristics, then on-state resistance decreases, but mechanical stability deteriorates due to brittleness
Solution Approach 1:
A carbon-based auxiliary carrier is introduced as an intermediary substrate to support thin semiconductor wafers during processing. The carrier has high mechanical strength and thermal stability, providing the necessary support for wafer thicknesses below 100 μm while allowing the wafer to achieve its desired thin profile for improved device characteristics.
Solution Approach 2:
The solution uses a composite structure combining the semiconductor wafer with a carbon-based carrier material. The carrier comprises carbon elements with reinforcing materials constituting at least 2 vol-% of the carrier, creating a composite system that leverages the electrical properties of the semiconductor and the mechanical/thermal properties of the carbon carrier.
2Strength
If conventional auxiliary carriers are used to increase mechanical stability, then handling becomes easier, but process technology complexity increases
Solution Approach 1:
The invention changes the material parameters of the auxiliary carrier by using carbon-based materials with specific properties (high thermal stability up to 1300°C, controlled expansion coefficient). This allows the carrier to withstand high-temperature processing without requiring complex process modifications, thereby reducing process technology complexity while maintaining mechanical stability.
3Ease of manufacture
If standard wafer sizes and thicknesses are used, then manufacturing is simpler, but device performance is limited
Solution Approach 1:
The manufacturing process is segmented into distinct stages: attaching the wafer to the carbon carrier, processing the thin wafer while supported, and then separating the finished device from the carrier. This segmentation allows the use of non-standard thin wafer dimensions for improved performance while maintaining manufacturing simplicity through standardized process steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances mechanical stability and thermal conductivity, enabling the efficient processing and separation of semiconductor wafers while reducing the thickness of semiconductor material, thereby improving device characteristics and reducing costs.
Implementation Method 1
providing mechanical stability and thermal stability up to 1300°C
Implementation Method 2
The carrier comprises a continuous carbon structure defining the first surface of the carrier, and a reinforcing material embedded in the continuous carbon structure, the reinforcing material constituting at least 2 vol-% of the carrier
Implementation Method 3
enhances mechanical stability and thermal conductivity
Data Source
AI summary
A carrier configured to be attached to a semiconductor substrate via a first surface comprises a continuous carbon structure defining a first surface of the carrier, and a reinforcing material constituting at least 2 vol-% of the carrier.