Semiconductor/Solid-State Device Details TRIZ Cases

A semiconductor die uses a secondary controller to disable circuit modules and reduce heat dissipation when temperatures exceed a threshold.

Metal members with varying sizes enable hierarchically differentiated connection heights, controlling warpage while maintaining thin package profiles.

Solder bump and pad connections replace expensive through silicon vias to lower manufacturing costs for ultra-small die packages.

Single die pad lead-frame co-packages Schottky diode and vertical MOSFET with power regulating controller.

A cobalt capping layer seals the conductive core of a through-substrate via to ensure stable electrical conductivity.

Thick resin portions around the terminal opening prevent breakage caused by fastening torque stress on the casing.

A monolithic cold plate uses a toothed trough to provide direct visual inspection of drill wander.

Replacing deep wells with a single well in the upper memory layer reduces manufacturing complexity while maintaining peripheral isolation reliability.

Selective etching of a liner layer forms vias for metal filling, resolving threshold voltage pinning and dopant penetration issues in high-k gate structures.

A capillary trap-vapor pump evaporates fluid within a contoured cavity to stabilize vapor bubbles and maintain a thin liquid film.

Etching a recess in the bottom silicon die allows embedding a top component, reducing overall package height while preserving structural integrity.

A substrate structure embeds capacitive elements between dielectric layers connected by copper pillars.

T-shaped bumps with enlarged portions enhance bonding strength, preventing peeling from thermal stress in thin packages.

Internal heat conducting elements and radiating fins dissipate thermal energy from components, reducing reliance on external cooling devices.

Copper alloy wiring prevents scattering during sputter etching, eliminating void formation and improving electromigration resistance in semiconductor devices.

Single lithography forms annular optical and lined electrical vias, eliminating multiple masks to reduce manufacturing complexity.

Metal side walls and pins in a combing bump structure improve adhesive strength, resolving PI peeling issues in fine-pitch products.

A closed-loop liquid cooling system transfers heat from electronic components to ambient air via a barrier.

Three-dimensional terminal stacking shortens current paths to lower inductance and improve power conversion efficiency.

Thermally conductive pillars bridge encapsulant layers to move heat away from semiconductor components, resolving low conductivity bottlenecks.

Asymmetric pad sizing in stacked semiconductor chips enables direct bonding, reducing contact failure from misalignment while shortening signal paths.

Stacked semiconductor dies connect via conductive pillars to offset redistribution structures for vertical integration.

Transfer printing aligns LED chips with grid barriers to isolate sub-pixels, reducing pixel size to 100 μm² while blocking light interference.

Relocating through hole via formation from the active die area to the saw street region minimizes functional circuit area loss and manufacturing costs.

An embedded trace substrate integrates silicon dies and passive components through redistribution layers to enable efficient signal communication.

A composite insulator structure with a low-k layer reduces parasitic capacitance below 30 attofarads between adjacent conductive vias.

Multi-layer adhesive film structure enables precise photolithography patterning for stacked semiconductor device assembly.

Cabled conductive structures surrounded by grid plates increase specific capacitance while reducing substrate coupling and self-inductance.

A micro LED transfer method uses a bonding layer that melts above its liquidus temperature to pick up and place devices onto receiving substrates.

Non-overlapping drain and source plugs in a FINFET reduce gate-drain capacitance, suppressing Miller effect delay while maintaining current driving capability.

A chip mounting portion with controlled surface roughness disperses thermal stress through large irregularities.

Integrating a PTC protection layer within the vertical chip structure limits over-current faults while reducing die size and manufacturing costs.

Magnetic field aligns carbon nanotubes parallel to chip surfaces using oleic acid surfactant for thermal interface materials.

Coupling the cathode electrode to the back surface eliminates insulating films, simplifying manufacturing and reducing main surface height.

A dual chip card module uses comb-shaped internal connection zones to join antenna wires through resin-coated vias in a support film.

A semiconductor device uses a multi-layered passivation structure with distinct insulating materials to protect interconnection patterns.

Multiple suction nozzles on a pickup head switch positions to enable simultaneous face-down component supply, eliminating time-consuming flip operations.

Segmenting the package into a main body and a sub-package eliminates gaps between embedded components, ensuring reliable electrical connections.

Lithographic patterning of benzocyclobutene creates rigid dielectric layers that preserve device performance by avoiding high-temperature thermal bonding.

Angled metallization patterns reduce normalized stress on redistribution layers, preventing cracking from thermal expansion mismatch.

Contrasting material lining trenches provides alignment references for back side wafer processing without requiring infrared steppers.

Buffer layers at tapered conductive via portions facilitate plasma etching while grounding prevents charge accumulation that causes electrical breakdown.

A composite dummy wafer structure with silicon dioxide and nitride layers ensures uniform polysilicon deposition rates.

A memory device distributively stores N-bit data across M cells using distinct sensing margins and reading voltages.

Replacing gold with a nickel-tin bonding system reduces manufacturing costs and prevents epitaxial layer defects during LED wafer attachment.

A wafer level chip scale packaging intermediate structure uses redistribution layers to connect interposer dies.

A wiring board opening edge positioned outside the chip mounting area directs underfill resin flow to corner regions.

A semiconductor bond wire connects to a soft intermediate element on the contact pad.

A simplified system in package structure integrates redistribution layers directly onto the substrate.