Semiconductor Device Terminal Stacking for Inductance Reduction

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Solution Overview

Problem

Conventional semiconductor devices face challenges in reducing inductance in upper-lower arm circuits, which affects the efficiency of electric power conversion and current path simplification.

Innovation Solution

The semiconductor device configuration includes multiple main terminals with lateral surfaces facing each other, arranged in a specific pattern to reduce inductance, with at least three main terminals continuously arranged in one direction, and partially or entirely placed in regions extending from the semiconductor element's end surfaces, simplifying the current path.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If main terminals are arranged in a conventional configuration, then the device structure is simple, but the inductance is high which reduces power conversion efficiency

Engineering Contradiction:
Improvedevice structure simplicityVSAvoidpower conversion efficiency
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

The patent transitions from a conventional linear or scattered terminal arrangement to a three-dimensional stacked configuration where main terminals are vertically arranged above each other. This spatial reorganization in the vertical dimension reduces the current path length and loop area, thereby reducing inductance and improving power conversion efficiency while maintaining manufacturing feasibility through standardized packaging processes

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Ease of operation

If main terminals are placed far apart, then the current path is long, but the inductance increases which affects circuit performance

Engineering Contradiction:
Improvecurrent path lengthVSAvoidcircuit performance
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The patent utilizes vertical stacking to position main terminals directly above each other in the thickness direction of the semiconductor substrate. This three-dimensional arrangement dramatically shortens the current path length between terminals compared to planar arrangements, reducing inductance and improving circuit performance while maintaining ease of connection

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Loss of energy

If multiple main terminals are continuously arranged in one direction, then the inductance is reduced, but the device width increases

Engineering Contradiction:
ImproveinductanceVSAvoiddevice width
Core Design Contradiction:
Loss of energyVSArea of stationary object

Solution Approach 1:

The patent arranges multiple main terminals in a vertical stack along the thickness direction of the semiconductor substrate rather than spreading them out in the planar direction. This vertical configuration reduces inductance by minimizing current loop area while containing the device footprint, as the terminals occupy minimal additional width compared to a linear horizontal arrangement

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11456238B2Semiconductor device including a semiconductor chip connected with a plurality of main terminals
Publication Date: 2022.09.27 DENSO CORP
  • US11456238B2 patent drawing
  • US11456238B2 patent drawing
  • US11456238B2 patent drawing

AI summary

A semiconductor device configures one arm of an upper-lower arm circuit, and includes: a semiconductor element that includes a first main electrode and a second main electrode, wherein a main current between the first main electrode and the second main electrode; and multiple main terminals that include a first main terminal connected to the first main electrode and a second main terminal connected to the second main electrode. The first main terminal and the second main terminal are placed adjacent to each other; A lateral surface of the first main terminal and a lateral surface of the second main terminal face each other in one direction orthogonal to a thickness direction of the semiconductor element.