Semiconductor Passivation Structure for Mechanical Durability
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving optimal integration density and operation speed due to limitations in the design of passivation layers and interconnection structures, which affect mechanical durability and data processing efficiency.
Innovation Solution
The semiconductor device incorporates a multi-layered passivation structure with different insulating materials for the first and second passivation layers, and a specific thickness configuration to enhance mechanical durability and data processing efficiency, along with an interconnection structure that includes internal interconnection lines and conductive patterns connected to chip pads.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a single-layer passivation structure is used, then the device structure is simple, but the mechanical durability is insufficient
Solution Approach 1:
The passivation structure is divided into multiple layers: a first passivation layer and a second passivation layer with different insulating materials. This segmentation allows each layer to provide specific mechanical protection, improving overall durability while maintaining manageable structural complexity
Solution Approach 2:
The patent employs composite materials by using different insulating materials for the first and second passivation layers. This combination leverages the complementary properties of different materials to achieve enhanced mechanical durability that cannot be obtained with a single material
2Reliability
If uniform thickness passivation layers are used, then the manufacturing process is simple, but the stress distribution is uneven causing reliability issues
Solution Approach 1:
The passivation layers are designed with non-uniform thickness where the first passivation layer has a first thickness and the second passivation layer has a second thickness that differs from the first. This local variation in thickness optimizes stress distribution across different regions of the device, improving reliability while introducing controlled structural complexity
3Speed
If traditional interconnection structures are used, then the design is simple, but the data processing speed is limited
Solution Approach 1:
The interconnection structure incorporates internal interconnection lines embedded within the passivation layers, adding a vertical dimension to the interconnection architecture. This three-dimensional interconnection approach reduces signal transmission distance and improves data processing speed while increasing structural complexity
Data Source
AI summary
A semiconductor device including a substrate including a chip region and an edge region; integrated circuit elements on the chip region; an interlayer insulating layer covering the integrated circuit elements; an interconnection structure on the interlayer insulating layer and having a side surface on the edge region; a first and second conductive pattern on the interconnection structure, the first and second conductive patterns being electrically connected to the interconnection structure; a first passivation layer covering the first and second conductive patterns and the side surface of the interconnection structure; and a second passivation layer on the first passivation layer, wherein the second passivation layer includes an insulating material different from the first passivation layer, and, between the first and second conductive patterns, the second passivation layer has a bottom surface that is located at a vertical level lower than a top surface of the first conductive pattern.