Multi-Die DC-DC Boost Converter Single Die Pad Packaging

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Solution Overview

Problem

Existing multi-die packaging for boost power converters requires multiple die pads and bond wires, leading to increased package size, cost, and reduced efficiency due to parasitic capacitance and inductance.

Innovation Solution

A single die pad lead-frame packaging configuration is used, where the Schottky diode and vertical MOSFET are co-packaged with the power regulating controller, eliminating bond wires and optimizing terminal configurations to minimize footprint and parasitics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If multiple die pads and bond wires are used for multi-die packaging, then the Schottky diode and vertical MOSFET can be separately packaged with proper electrical connections, but the package size increases and manufacturing cost increases

Engineering Contradiction:
Improveelectrical connection reliabilityVSAvoidpackage size
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent merges the Schottky diode and vertical MOSFET packaging onto a single die pad, eliminating the need for separate die pads and reducing package size. The anode of the Schottky diode is directly connected to the drain of the MOSFET through the shared die pad, combining multiple electrical connection functions into one packaging structure.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent extracts and eliminates the bond wires from the packaging structure by using the die pad itself as the electrical connection path. This removal of unnecessary components reduces both package size and manufacturing complexity while maintaining reliable electrical connections.

Inventive Principle:
Principle #2Taking out (Extraction)

2Reliability

If multiple die pads and bond wires are used for multi-die packaging, then proper electrical connections can be established, but manufacturing cost increases

Engineering Contradiction:
Improveelectrical connection reliabilityVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent combines multiple die packaging functions into a single die pad structure, reducing the number of packaging components and assembly steps. This merging approach simplifies the manufacturing process and reduces material costs while maintaining electrical connection reliability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent removes bond wires from the packaging structure, eliminating the cost of bond wire materials and the bonding process. This extraction of unnecessary components directly reduces manufacturing cost while the die pad itself provides the necessary electrical connection path.

Inventive Principle:
Principle #2Taking out (Extraction)

3Reliability

If bond wires are used for electrical connections, then the Schottky diode and MOSFET can be connected, but parasitic capacitance and inductance increase reducing power conversion efficiency

Engineering Contradiction:
Improveelectrical connectionVSAvoidpower conversion efficiency
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent extracts and eliminates bond wires from the electrical connection path, removing the source of parasitic capacitance and inductance. The direct connection through the die pad provides a lower impedance path with minimal parasitics, improving power conversion efficiency while maintaining reliable electrical connection.

Inventive Principle:
Principle #2Taking out (Extraction)

Data Source

PatentUS7808102B2Multi-die DC-DC boost power converter with efficient packaging
Publication Date: 2010.10.05 ALPHA & OMEGA SEMICONDUCTOR LTD
  • US7808102B2 patent drawing
  • US7808102B2 patent drawing
  • US7808102B2 patent drawing

AI summary

A DC-DC boost converter in multi-die package is proposed having an output Schottky diode and a low-side vertical MOSFET controlled by a power regulating controller (PRC). The multi-die package includes a single die pad with the Schottky diode placed there on side by side with the vertical MOSFET. The PRC die is attached atop the single die pad via an insulating die bond. Alternatively, the single die pad is grounded. The vertical MOSFET is a top drain vertical N-channel FET, the substrate of Schottky diode die is its anode. The Schottky diode and the vertical MOSFET are stacked atop the single die pad. The PRC is attached atop the single die pad via a standard conductive die bond. The Schottky diode die can be supplied in a flip-chip configuration with cathode being its substrate. Alternatively, the Schottky diode is supplied with anode being its substrate without the flip-chip configuration.